BSM250D17P2E004 ROHM

BSM250D17P2E004 electronic component of ROHM
BSM250D17P2E004 ROHM
BSM250D17P2E004 Discrete Semiconductor Modules
BSM250D17P2E004  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSM250D17P2E004 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM250D17P2E004 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No.BSM250D17P2E004
Manufacturer:ROHM
Category:Discrete Semiconductor Modules
Description:Discrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module
Datasheet:BSM250D17P2E004 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 1167.1 ea
Line Total: USD 1167.1 
Availability : 46
  
Ship by Fri. 19 Jun to Tue. 23 Jun
QtyUnit Price
1$ 1167.1
4$ 1167.1
  

Availability46
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1167.1
4$ 1167.1

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Configuration
Brand
Transistor Polarity
Typical Delay Time
Fall Time
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BSM250D17P2E004 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM250D17P2E004 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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SiC Power Module Datasheet BSM250D17P2E004 Application Circuit diagram Motor drive 1 7 Inverter, Converter Photovoltaics, wind power generation. 9 8 Induction heating equipment. 3,4 Features 6 5 1) Low surge, low switching loss. 2 10 2) High-speed switching possible. NTC 11 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 19.Oct.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 1/10 BSM250D17P2E004 Datasheet Absolute maximum ratings (T = 25C) j Parameter Symbol Conditions Ratings Unit V G-S short 1700 Drain - Source Voltage DSS V D-S short 22 Gate - Source Voltage (+) GSS V V Gate - Source Voltage (-) D-S short -6 GSS V G - S Voltage (t <300nsec) D-S short -10 to 26 GSSsurge surge I DC(Tc=60C) VGS=18V 250 D Drain Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V DRM Note 2) 500 I DC(Tc=60C) VGS=18V 250 A S I Source Current DC(Tc=60C) VGS=0V 200 S Note 1) I Pulse (Tc = 60C 1ms VGS=18V 500 SRM Note 2) Total Power Dissipation Ptot Tc = 25C 1800 W Note 3) Tjmax Max Junction Temperature 175 Tjop Junction Temperature -40 to 150 C Tstg -40 to 125 Storage Temperature Visol Terminals to baseplate f = 60Hz AC 1 min. 3400 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - N m Mounting Torque Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V +22V 0V -6V -10V www.rohm.com 19.Oct.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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