BSS84XHZGG2CR ROHM

BSS84XHZGG2CR electronic component of ROHM
BSS84XHZGG2CR ROHM
BSS84XHZGG2CR MOSFETs
BSS84XHZGG2CR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS84XHZGG2CR MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS84XHZGG2CR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSS84XHZGG2CR
Manufacturer: ROHM
Category: MOSFETs
Description: P-Channel 60V 230mA (Ta) 1W (Ta) Surface Mount DFN1010-3W
Datasheet: BSS84XHZGG2CR Datasheet (PDF)
Price (USD)
1: USD 0.6762 ea
Line Total: USD 0.68 
Availability : 7784
  
Ship by Wed. 13 Aug to Fri. 15 Aug
QtyUnit Price
1$ 0.6762
10$ 0.4975
100$ 0.3312
500$ 0.253
1000$ 0.2134
5000$ 0.1804
8000$ 0.1738

Availability 7784
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6762
10$ 0.4975
100$ 0.3312
500$ 0.253
1000$ 0.2134
5000$ 0.1804
8000$ 0.1738

   
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS84XHZGG2CR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS84XHZGG2CR and other electronic components in the MOSFETs category and beyond.

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BSS84X HZG Datasheet Pch -60V -230mA Small Signal MOSFET AEC-Q101 Qualified llOutline V -60V DSS R (Max.) 5.3 DS(on) DFN1010-3W I 230mA D P 1.0W D llInner circuit llFeatures 1) Leadless ultra small and exposed drain pad for excellent thermal conduction SMD plastic package (1.01.00.4mm) 2) Side wettable Flanks for automated optical solder inspection(AOI). Tin-plated 100% solderable side pads guarantees Min.125m llPackaging specifications 3) AEC-Q101 qualified 4) -4.5V Drive Embossed Packing Tape Type Reel size (mm) 180 llApplication Tape width (mm) 8.0 Switching circuits Quantity (pcs) 8000 High-side loadswitch Taping code G2CR Relay driver Marking VR llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage -60 V DSS I Continuous drain current 230 mA D *1 I Pulsed drain current 920 mA DP V Gate - Source voltage 20 V GSS *2 P Power dissipation 1.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 - Rev.001 2020 ROHM Co., Ltd. All rights reserved.BSS84X HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 125.0 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -60 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -56.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -60V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 10 A GSS GS DS V V = V , I = -100A Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -100A GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -230mA - 2.8 5.3 GS D Static drain - source *3 R DS(on) on - state resistance V = -4.5V, I = -230mA - 3.5 6.4 GS D Forward Transfer *4 Y V = -10V, I = -230mA 0.2 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a Cu Board (40400.8mm) *3 Pulsed www.rohm.com 2/11 - Rev.001 2020 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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