Product Information

EMP11T2R

EMP11T2R electronic component of ROHM

Datasheet
ROHM Semiconductor Diodes - General Purpose, Power, Switching SWITCH 80V 100MA

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4174 ea
Line Total: USD 0.42

8308 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8308 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

EMP11T2R
ROHM

1 : USD 0.4174
10 : USD 0.2933
100 : USD 0.1322
1000 : USD 0.0978
2500 : USD 0.092
8000 : USD 0.0816
24000 : USD 0.0794
48000 : USD 0.0782
96000 : USD 0.0748

7344 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 175
Multiples : 1

Stock Image

EMP11T2R
ROHM

175 : USD 0.5243
250 : USD 0.5089
500 : USD 0.4951
1000 : USD 0.4852

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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EMP11 Switching Diode (High speed switching) Data sheet Outline V 80 V RM I 300 mA FM I 100 mA o I 4000 mA FSM Features Inner Circuit High reliability Small mold type High Speed switching Application Packaging Specifications High speed switching Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 8000 Structure Epitaxial planar Taping Code T2R Marking P11 (T = 25C) Absolute Maximum Ratings a Parameter Symbol Conditions Limits Unit V Reverse voltage - 80 V R V Repetitive peak reverse voltage - 80 V RM I Average rectified forward current - 100 mA o Forward current I - 300 mA FM I Peak forward surge current t=1s 4000 mA FSM P Power dissipation * - 150 mW D T Junction temperature - 150 j Storage temperature T - -55 150 stg *4 elements total (T = 25C) Characteristics a Value per element Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =100mA - - 1.2 V F F I Reverse current V =70V - - 0.1 A R R C Capacitance between terminals V =6.0V f=1.0MHz - - 3.5 pF t R Reverse recovery time trr V =6.0V I =5.0mA R =50 - - 4.0 ns R F L Cautionstatic electricity www.rohm.com 1/4 2016 ROHM Co., Ltd. All rights reserved. 2018/06/06 Rev.002EMP11 Data sheet Characteristic Curves www.rohm.com 2/4 2016 ROHM Co., Ltd. All rights reserved. 2018/06/06 Rev.002

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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