EMT51T2R

VT6T1 / EMT51 Datasheet Power management (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 V -20V CEO I -200mA C VT6T1 EMT51 (VMT6) (EMT6) llFeatures llInner circuit 1) General Purpose. 2) Two 2SAR522 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6T1 1212 T2R 180 8 8000 T1 (VMT6) SOT-563 EMT51 1616 T2R 180 8 8000 T51 (EMT6) www.rohm.com 1/7 20151127 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.VT6T1 / EMT51 Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage -20 V CBO V Collector-emitter voltage -20 V CEO V Emitter-base voltage -5 V EBO I -200 mA C Collector current *1 I -400 mA CP Power dissipation VT6T1 150 *2 *3 P mW D EMT51 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -20 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -20 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I V = -20V Collector cut-off current - - -100 nA CBO CB I Emitter cut-off current V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -100mA, I = -10mA - -120 -300 mV CE(sat) C B h V = -2V, I = -1mA DC current gain 120 - 560 - FE CE C V = -10V, I = 10mA, CE E Transition frequency f - 350 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 3.0 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20151127 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.