Product Information

EMX18T2R

EMX18T2R electronic component of ROHM

Datasheet
ROHM Semiconductor Bipolar Transistors - BJT DUAL NPN 12V 500MA
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

295: USD 0.1338 ea
Line Total: USD 39.47

7653 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 295  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
83 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

EMX18T2R
ROHM

1 : USD 0.5008
10 : USD 0.4467
30 : USD 0.4196
100 : USD 0.3926
500 : USD 0.3768
1000 : USD 0.3689

5518 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

EMX18T2R
ROHM

1 : USD 0.5517
10 : USD 0.477
100 : USD 0.3358
500 : USD 0.2705
1000 : USD 0.2076
8000 : USD 0.1946
24000 : USD 0.191
48000 : USD 0.1863

7653 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 295
Multiples : 1

Stock Image

EMX18T2R
ROHM

295 : USD 0.1338
500 : USD 0.1305

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "ROHM"

Image Description
MCR03EZPJ361 electronic component of ROHM MCR03EZPJ361

Chip Resistor - Surface Mount 360Ohms ±5% 1/10W 0603 RoHS
Stock : 1050

MCR03EZPJ161 electronic component of ROHM MCR03EZPJ161

Chip Resistor - Surface Mount 160Ohms ±5% 1/10W 0603 RoHS
Stock : 10000

MCR03EZPJ180 electronic component of ROHM MCR03EZPJ180

Chip Resistor - Surface Mount 18Ohms ±5% 1/10W 0603 RoHS
Stock : 3000

MCR03EZPJ274 electronic component of ROHM MCR03EZPJ274

Chip Resistor - Surface Mount 270KOhms ±5% 1/10W 0603 RoHS
Stock : 50

MCR03EZPJ364 electronic component of ROHM MCR03EZPJ364

Chip Resistor - Surface Mount 360KOhms ±5% 1/10W 0603 RoHS
Stock : 1550

MCR03EZPJ623 electronic component of ROHM MCR03EZPJ623

Chip Resistor - Surface Mount 62KOhms ±5% 1/10W 0603 RoHS
Stock : 0

MCR03EZPJ680 electronic component of ROHM MCR03EZPJ680

Chip Resistor - Surface Mount 68Ohms ±5% 1/10W 0603 RoHS
Stock : 500

MCR03EZPJ332 electronic component of ROHM MCR03EZPJ332

Chip Resistor - Surface Mount 3.3KOhms ±5% 1/10W 0603 RoHS
Stock : 147707

MCR03EZPJ510 electronic component of ROHM MCR03EZPJ510

Chip Resistor - Surface Mount 51Ohms ±5% 1/10W 0603 RoHS
Stock : 400

MCR03EZPFX3163 electronic component of ROHM MCR03EZPFX3163

Chip Resistor - Surface Mount 316KOhms ±1% 1/10W 0603 RoHS
Stock : 1700

More Products By Category "Bipolar Transistors - BJT"

Image Description
2N5401 electronic component of Central Semiconductor 2N5401

Central Semiconductor Bipolar Transistors - BJT PNP Gen Pr Amp
Stock : 1

2SD1898T100Q electronic component of ROHM 2SD1898T100Q

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount MPT3
Stock : 1

MJE170G electronic component of ON Semiconductor MJE170G

Bipolar (BJT) Transistor PNP 40 V 3 A 50MHz 1.5 W Through Hole TO-126
Stock : 266

FMMT551TA electronic component of Diodes Incorporated FMMT551TA

Bipolar Transistors - BJT PNP Medium Power
Stock : 1207

BC807DS,115 electronic component of Nexperia BC807DS,115

Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Stock : 12001

NSS60601MZ4T3G electronic component of ON Semiconductor NSS60601MZ4T3G

ON Semiconductor Bipolar Transistors - BJT 60V6A LOW VCE(SAT) NPN
Stock : 1

KSC2330YTA electronic component of ON Semiconductor KSC2330YTA

Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3
Stock : 0

CMUT2907A TR electronic component of Central Semiconductor CMUT2907A TR

Central Semiconductor Bipolar Transistors - BJT PNP
Stock : 8901

2SC4117-BL,LF electronic component of Toshiba 2SC4117-BL,LF

Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Stock : 1

2N4401 electronic component of ON Semiconductor 2N4401

Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Stock : 0

Additional Infomation About Product

EMX18 / UMX18N Datasheet General purpose transistors (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 SOT-363 V 12V CEO I 500mA C EMX18 UMX18N (EMT6) (UMT6) llFeatures llInner circuit 1)Two 2SC5585 chips in a EMT or UMT package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMX18 1616 T2R 180 8 8000 X18 (EMT6) SOT-363 UMX18N 2021 TN 180 8 3000 X18 (UMT6) www.rohm.com 1/7 20150910 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.EMX18 / UMX18N Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 12 V CEO V Emitter-base voltage 6 V EBO I 500 mA C Collector current *1 I 1.0 A CP Power dissipation EMX18 150 *2 *3 P mW D UMX18N 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage BV I = 10A Emitter-base breakdown voltage 6 - - V EBO E I V = 15V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 90 250 mV CE(sat) C B h V = 2V, I = 10mA DC current gain 270 - 680 - FE CE C V = 2V, I = -10mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7.5 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20150910 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted