Product Information

EMX1T2R

EMX1T2R electronic component of ROHM

Datasheet
Transistors Bipolar - BJT DUAL NPN 50V 150MA
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0688 ea
Line Total: USD 0.69

201003 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
7760 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 8000
Multiples : 8000

Stock Image

EMX1T2R
ROHM

8000 : USD 0.0708
16000 : USD 0.0708
24000 : USD 0.0708
32000 : USD 0.0708
40000 : USD 0.0708

201003 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 10
Multiples : 10

Stock Image

EMX1T2R
ROHM

10 : USD 0.0688
100 : USD 0.0548
300 : USD 0.0455
1000 : USD 0.0432
5000 : USD 0.0411
8000 : USD 0.0404

31683 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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EMX1T2R
ROHM

1 : USD 0.3795
10 : USD 0.2921
100 : USD 0.1644
1000 : USD 0.1104
2500 : USD 0.1093
8000 : USD 0.0989
24000 : USD 0.0943

45439 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 345
Multiples : 1

Stock Image

EMX1T2R
ROHM

345 : USD 0.1145
500 : USD 0.1046
1000 : USD 0.0897
2000 : USD 0.0849
8000 : USD 0.0788
16000 : USD 0.0715

15497 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 327
Multiples : 1

Stock Image

EMX1T2R
ROHM

327 : USD 0.2911
500 : USD 0.2833
1000 : USD 0.2763
2500 : USD 0.2708

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Additional Infomation About Product

EMX1 / UMX1N / IMX1 Datasheet General purpose transistor (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 SOT-363 V 50V CEO I 150mA C EMX1 UMX1N (EMT6) (UMT6) SOT-457 llFeatures 1) Two 2SC2412K chips in a EMT, UMT or SMT package. 2) Mounting possible with EMT3, UMT3 or SMT3 IMX1 (SMT6) automatic mounting machines. 3) Transistor elements are independent, llInner circuit eliminating interference. 4) Mounting cost and area can be cut in half. EMX1 / UMX1N IMX1 llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMX1 1616 T2R 180 8 8000 X1 (EMT6) SOT-363 UMX1N 2021 TN 180 8 3000 X1 (UMT6) SOT-457 IMX1 2928 T110 180 8 3000 X1 (SMT6) www.rohm.com 1/8 20150825 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.EMX1 / UMX1N / IMX1 Datasheet llAbsolute maximum ratings (T = 25C) a <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 7 V EBO I Collector current 150 mA C *1 *2 P EMX1/ UMX1N 150 mW/Total D Power dissipation *1 *3 P IMX1 300 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For Tr1 and Tr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 50A Collector-base breakdown voltage 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 7 - - V EBO E I V = 60V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 mV CE(sat) C B h V = 6V, I = 1mA DC current gain 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/8 20150825 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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