X-On Electronics has gained recognition as a prominent supplier of EMX1FHAT2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. EMX1FHAT2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

EMX1FHAT2R ROHM

EMX1FHAT2R electronic component of ROHM
EMX1FHAT2R ROHM
EMX1FHAT2R Bipolar Transistors - BJT
EMX1FHAT2R Semiconductors

Images are for reference only
See Product Specifications
Part No. EMX1FHAT2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN+NPN SOT-563 .15A 120 tohFE 50V
Datasheet: EMX1FHAT2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3885 ea
Line Total: USD 0.39 
Availability - 869
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ: 1  Multiples: 1
Pack Size: 1

 EMX1FHAT2R More Buying Options & Price Grid(s)

Availability Price Quantity
869
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3885
10 : USD 0.3622
100 : USD 0.2344
500 : USD 0.1444
1000 : USD 0.0855
2500 : USD 0.0751
5000 : USD 0.06
8000 : USD 0.0531
24000 : USD 0.0485

Specifications

   
Manufacturer
Product Category
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Collector Emitter Voltage V Br Ceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMX1FHAT2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMX1FHAT2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

EMX1 FHA Datasheet General purpose transistor (dual transistors) AEC-Q101 Qualified llOutline Parameter Tr1 and Tr2 SOT-563 V 50V CEO SC-107C I 150mA C EMT6 llFeatures llInner circuit 1) Two 2SC2412K chips in a EMT package. 2) Mounting possible with EMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMX1 FHA 1616 T2R 180 8 8000 X1 (EMT6) www.rohm.com 1/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. EMX1 FHA Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 7 V EBO I Collector current 150 mA C *1 total P 150 mW D Power dissipation element P 120 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 7 - - V EBO E I Collector cut-off current V = 60V - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 mV CE(sat) C B h DC current gain V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. www.rohm.com 2/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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