Product Information

QH8JA1TCR

QH8JA1TCR electronic component of ROHM

Datasheet
MOSFET 20V Pch+Pch Si MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8361 ea
Line Total: USD 0.84

2660 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1496 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.8361
10 : USD 0.6302
100 : USD 0.5371
500 : USD 0.483
1000 : USD 0.4048
3000 : USD 0.3864
6000 : USD 0.3864
9000 : USD 0.3714
24000 : USD 0.3703

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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QH8JA1 Datasheet -20V Pch +Pch Middle Power MOSFET llOutline V -20V DSS R (Max.) 38m DS(on) TSMT8 I 5.0A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Small surface mount package(TSMT8) 3) -1.8V Drive. 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TCR Marking JA1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS *1 I Continuous drain current 5.0 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 10 V GSS *3 I Avalanche current, single pulse -5.0 A AS *3 E Avalanche energy, single pulse 8.9 mJ AS *4 P 1.5 D Power dissipation (total) W *5 P 1.1 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. QH8JA1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 83.3 thJA Thermal resistance, junction - ambient (total) /W *4 R - - 100 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -10.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 10V, V = 0V - - 100 nA GSS GS DS leakage current Gate threshold V V = V , I = -1mA -0.5 - -1.2 V GS(th) DS GS D voltage V I = -1mA GS(th) D Gate threshold voltage - 1.7 - mV/ temperature coefficient T j referenced to 25 V = -4.5V, I = -5.0A - 28 38 GS D Static drain - source *6 R V = -2.5V, I = -5.0A - 35 48 m DS(on) GS D on - state resistance V = -1.8V, I = -1.2A - 49 77 GS D R Gate resistance f = 1MHz, open drain - 11 - G Forward Transfer *6 Y V = -5V, I = -5A 5.5 - - S fs DS D Admittance *1 Vgs 2.5V *2 Pw10s , Duty cycle 1% *3 L 0.5mH, V = -10V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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