Product Information

IPD50N06S4L08ATMA2

IPD50N06S4L08ATMA2 electronic component of Infineon

Datasheet
60V 50A 7.8mO@50A,10V 71W N Channel TO-252-3-11 MOSFETs ROHS

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.265 ea
Line Total: USD 1.26

7751 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.0858
10 : USD 0.9396
30 : USD 0.8484
100 : USD 0.7547
500 : USD 0.7131
1000 : USD 0.6943

7751 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.265
10 : USD 1.0522
100 : USD 0.8383
500 : USD 0.7302
1000 : USD 0.6107
2500 : USD 0.5612

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
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Technology
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Qualification
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Height
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Series
Transistor Type
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Subcategory
Cnhts
Hts Code
Mxhts
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The IPD50N06S4L08ATMA2 is an N-channel MOSFET RoHS-compliant component made by Infineon. It has a 60V rating and 50A of continuous drain current. Its maximum RDS(on) transistor resistance is 7.8 mO @ 50A, with a minimum gate-source threshold voltage of 10V and a maximum power dissipation of 71W. This MOSFET comes in a TO-252-3-11 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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