DMN3029LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
Low R ensures on state losses are minimized
DS(ON)
I
D
V R
(BR)DSS DS(ON)
Small form factor thermally efficient package enables higher
T = 25C
A
density end products
8.0A
18.6m @ V = 10V
GS
Occupies just 33% of the board area occupied by SO-8 enabling
30V
smaller end product
6.5A
26.5m @ V = 4.5V
GS
100% UIS (Avalanche) rated
100% Rg tested
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the on-
state resistance (R ) and yet maintain superior switching
DS(on)
performance, making it ideal for high efficiency power management
Mechanical Data
applications.
Case: POWERDI3333-8
Case Material: Molded Plastic, Green Molding Compound. UL
Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Backlighting
Terminals: Finish Matte Tin annealed over Copper leadframe.
DC-DC Converters
Solderable per MIL-STD-202, Method 208
Power management functions
Weight: 0.072 grams (approximate)
POWERDI3333-8
Pin 1
S
S
8
1
S
G
7
2
6
3
D
D
5
4
D
D
Top View
Top View Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMN3029LFG-7 POWERDI3333-8 2000 / Tape & Reel
DMN3029LFG-13 POWERDI3333-8 3000 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMN3029LFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 25 V
GSS
Steady T = +25C 5.3
A
Continuous Drain Current (Note 5) V = 10V I A
GS D
State = +70C 4.2
T
A
Steady T = +25C 8.0
A
A
Continuous Drain Current (Note 6) V = 10V I
GS D
State 6.3
T = +70C
A
T = +25C 9.5
A
Continuous Drain Current (Note 6) V = 10V t 10s I A
GS D
7.7
T = +70C
A
T = +25C
Steady 6.5
A
A
Continuous Drain Current (Note 6) V = 4.5V I
GS D
State 4.9
T = +70C
A
T = +25C 7.8
A
Continuous Drain Current (Note 6) V = 4.5V t 10s I A
GS D
6.2
T = +70C
A
Pulsed Drain Current (Note 7) I 70 A
DM
Avalanche Current (Notes 7 & 8) 18 A
I
AR
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH 16 mJ
E
AR
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5) 1.0 W
P
D
130.6 C/W
Thermal Resistance, Junction to Ambient @T = +25C (Note 5) R
A JA
Power Dissipation (Note 6) P 2.07 W
D
Thermal Resistance, Junction to Ambient @T = +25C (Note 6) R 62.5 C/W
A JA
Power Dissipation (Note 6) t 10s P 3.0 W
D
Thermal Resistance, Junction to Ambient @T = +25C (Note 6) t 10s R 43.8 C/W
A JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 2 x 2 FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AR AR J
100 400
P = 10s
R
DS(on) W
Limited
350
Single Pulse
R = 60C/W
JA
R = r * R
JA(t) (t) JA
10 300
T - T = P * R
JA JA(t)
DC 250
P = 10s
W
1
200
P = 1s
W
P = 100ms
W
P = 10ms
150
W
P = 1ms
W
P = 100s
W
0.1
100
T = 150C
J(max)
T = 25C
A
50
Single Pulse
0.01
0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1,000
V , DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec)
DS
Fig. 2 Single Pulse Maximum Power Dissipation
Fig. 1 SOA, Safe Operation Area
POWERDI is a registered trademark of Diodes Incorporated.
2 of 7
October 2012
DMN3029LFG
Diodes Incorporated
www.diodes.com
Document number: DS35448 Rev. 7 - 2
NEW PRODUCT
ADVANCE INFORMATION
I, DRAIN CURRENT (A)
D
P , PEAK TRANSIENT POIWER (W)
(PK)