X-On Electronics has gained recognition as a prominent supplier of QS5U16TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS5U16TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS5U16TR ROHM

QS5U16TR electronic component of ROHM
QS5U16TR ROHM
QS5U16TR MOSFETs
QS5U16TR Semiconductors

Images are for reference only
See Product Specifications
Part No. QS5U16TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET N-CH 30V 2A
Datasheet: QS5U16TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0375 ea
Line Total: USD 1.04 
Availability - 2863
Ship by Mon. 12 May to Wed. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1

 QS5U16TR More Buying Options & Price Grid(s)

Availability Price Quantity
2863
Ship by Mon. 12 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 1.0375
10 : USD 0.852
100 : USD 0.5995
500 : USD 0.4752
1000 : USD 0.2992
3000 : USD 0.2607
6000 : USD 0.2409
9000 : USD 0.2123

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS5U16TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS5U16TR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

QS5U16 Transistors 2.5V Drive Nch+SBD MOS FET QS5U16 z External dimensions (Unit : mm) z Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) z Features 1) The QS5U16 combines Nch MOSFET with a 0~0.1 (1) (2) (3) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). Each lead has same dimensions 4) The Independently connected Schottky barrier diode Abbreviated symbol : U16 has low forward voltage. z Applications Load switch, DC / DC conversion z Packaging specifications z Equivalent circuit Package Taping (5) (4) Type Code TR Basic ordering unit (pieces) 3000 QS5U16 2 1 (1) Gate (2) Source (1) (2) (3) (3) Anode (4) Cathode 1 ESD PROTECTION DIODE (5) Drain 2 BODY DIODE Rev.A 1/4 1.6 2.8 0.3~0.6QS5U16 Transistors z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit V Drain-source voltage DSS 30 V Gate-source voltage VGSS 12 V Continuous ID 2.0 A Drain current 1 Pulsed I 8.0 A DP Continuous IS 0.8 A Source current 1 (Body diode) Pulsed ISP 3.2 A Channel temperature Tch 150 C 3 Power dissipation PD 0.9 W/ELEMENT <Di> Repetitive peak reverse voltage VRM 30 V Reverse voltage VR 20 V Forward current IF 0.5 A 2 I Forward current surge peak FSM 2.0 A Junction temperature Tj 150 C 3 Power dissipation PD 0.7 W/ELEMENT <MOSFET AND Di> 3 Total power dissipation PD 1.25 W / TOTAL Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 60Hz1cyc. 3 Mounted on a ceramic board z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V / VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, / VGS=0V Zero gate voltage drain current IDSS 1 AVDS=30V / VGS=0V Gate threshold voltage V 0.5 1.5 V V =10V / I =1mA GS (th) DS D 71 100 m ID=2.0A, VGS=4.5V Static drain-source on-state RDS (on) 76 107 m ID=2.0A, VGS=4V resistance 110 154 m I =2.0A, V =2.5V D GS Forward transfer admittance Yfs 1.5 SVDS=10V, ID=2.0A Input capacitance Ciss 175 pF VDS=10V Output capacitance C 50 pF V =0V oss GS Reverse transfer capacitance Crss 25 pF f=1MHz Turn-on delay time td (on) 8 ns ID=1.0A VDD 15V Rise time tr 10 ns VGS=4.5V Turn-off delay time t 21 ns d (off) RL=15 Fall time tf 8 ns RG=10 Total gate charge Qg 2.8 3.9 nC VDD 15V Gate-source charge Q 0.6 nC V =4.5V gs GS Gate-drain charge Qgd0.8 nC ID=2.0A Pulsed <Body diode (source-drain)> Forward voltage VSD 1.2 V IS=3.2A / VGS=0V Pulsed <Di> I =0.1A 0.36 V F Forward voltage VF 0.47 V IF=0.5A Reverse current IR 100 A VR=20V Rev.A 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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