QS5U16 Transistors 2.5V Drive Nch+SBD MOS FET QS5U16 z External dimensions (Unit : mm) z Structure Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX 2.9 0.85 1.9 0.7 0.95 0.95 (5) (4) z Features 1) The QS5U16 combines Nch MOSFET with a 0~0.1 (1) (2) (3) Schottky barrier diode in a single TSMT5 package. 0.4 0.16 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). Each lead has same dimensions 4) The Independently connected Schottky barrier diode Abbreviated symbol : U16 has low forward voltage. z Applications Load switch, DC / DC conversion z Packaging specifications z Equivalent circuit Package Taping (5) (4) Type Code TR Basic ordering unit (pieces) 3000 QS5U16 2 1 (1) Gate (2) Source (1) (2) (3) (3) Anode (4) Cathode 1 ESD PROTECTION DIODE (5) Drain 2 BODY DIODE Rev.A 1/4 1.6 2.8 0.3~0.6QS5U16 Transistors z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit V Drain-source voltage DSS 30 V Gate-source voltage VGSS 12 V Continuous ID 2.0 A Drain current 1 Pulsed I 8.0 A DP Continuous IS 0.8 A Source current 1 (Body diode) Pulsed ISP 3.2 A Channel temperature Tch 150 C 3 Power dissipation PD 0.9 W/ELEMENT <Di> Repetitive peak reverse voltage VRM 30 V Reverse voltage VR 20 V Forward current IF 0.5 A 2 I Forward current surge peak FSM 2.0 A Junction temperature Tj 150 C 3 Power dissipation PD 0.7 W/ELEMENT <MOSFET AND Di> 3 Total power dissipation PD 1.25 W / TOTAL Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 60Hz1cyc. 3 Mounted on a ceramic board z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V / VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, / VGS=0V Zero gate voltage drain current IDSS 1 AVDS=30V / VGS=0V Gate threshold voltage V 0.5 1.5 V V =10V / I =1mA GS (th) DS D 71 100 m ID=2.0A, VGS=4.5V Static drain-source on-state RDS (on) 76 107 m ID=2.0A, VGS=4V resistance 110 154 m I =2.0A, V =2.5V D GS Forward transfer admittance Yfs 1.5 SVDS=10V, ID=2.0A Input capacitance Ciss 175 pF VDS=10V Output capacitance C 50 pF V =0V oss GS Reverse transfer capacitance Crss 25 pF f=1MHz Turn-on delay time td (on) 8 ns ID=1.0A VDD 15V Rise time tr 10 ns VGS=4.5V Turn-off delay time t 21 ns d (off) RL=15 Fall time tf 8 ns RG=10 Total gate charge Qg 2.8 3.9 nC VDD 15V Gate-source charge Q 0.6 nC V =4.5V gs GS Gate-drain charge Qgd0.8 nC ID=2.0A Pulsed <Body diode (source-drain)> Forward voltage VSD 1.2 V IS=3.2A / VGS=0V Pulsed <Di> I =0.1A 0.36 V F Forward voltage VF 0.47 V IF=0.5A Reverse current IR 100 A VR=20V Rev.A 2/4