X-On Electronics has gained recognition as a prominent supplier of QS5W1TR bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. QS5W1TR bipolar transistors - bjt are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

QS5W1TR

QS5W1TR electronic component of ROHM
Images are for reference only
See Product Specifications
Part No. QS5W1TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Isolated AC/DC Converter
Datasheet: QS5W1TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.018 ea
Line Total: USD 1.02

Availability - 1489
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1358 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6705
10 : USD 0.5946
100 : USD 0.4163
500 : USD 0.3576
1000 : USD 0.3128
3000 : USD 0.2829
6000 : USD 0.276
9000 : USD 0.2668
24000 : USD 0.2634

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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We proudly offer the QS5W1TR Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the QS5W1TR Bipolar Transistors - BJT.

Data Sheet Midium Power Transistors (30V / 3A) QS5W1 Structure Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor TSMT5 Features 1) Low saturation voltage V = 0.4V (Max.) (I / I = 1A / 50mA) CE (sat) C B 2) High speed switching (1) Tr.1 Base (2) Emitter (3) Tr.2 Base Applications (4) Tr.2 Collector Abbreviated symbol : W01 (5) Tr.1 Collector Low Frequency Amplifier Driver Packaging specifications Inner circuit (Unit : mm) Package TSMT5 (5) (4) Type Code TR Quantity (pcs) 3000 Tr.1 Tr.2 (1) Tr.1 Base (2) Emitter Absolute maximum ratings (Ta = 25 C) (3) Tr.2 Base (1) (2) (3) (4) Tr.2 Collector <It is the same ratings for the Tr.1 and Tr.2> (5) Tr.1 Collector Parameter Symbol Limits Unit Collector-base voltage V 30 V CBO Collector-emitter voltage V 30 V CEO Emitter-base voltage V 6V EBO DC I 3A C Collector current *1 Pulsed I 6A CP *2 P 0.5 W/Total D *3 Power dissipation P 1.25 W/Total D *3 P 0.9 W/Element D Junction temperature T 150 C j Range of storage temperature T -55 to 150 C stg *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 25 x 25 x 0.8 mm ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/5QS5W1 Data Sheet Electrical characteristics (Ta=25C) <It is the same ratings for the Tr.1 and Tr.2> Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BV 30 - - V I = 1mA CEO C BV 30 - - V I = 100A Collector-base breakdown voltage CBO C Emitter-base breakdown voltage BV 6- - V I = 100A EBO E Collector cut-off current I -- 1 A V = 30V CBO CB Emitter cut-off current I -- 1 V = 4V A EBO EB *1 Collector-emitter staturation voltage V - 200 400 mV I = 1A, I = 50mA CE(sat) C B h V = 2V, I = 500mA DC current gain 200 - 500 - FE CE C *1 V = 10V CE Transition frequency f - 270 - MHz T I =-100mA, f=100MHz E V = 10V, I =0A CB E C Collector output capacitance -16 - pF ob f=1MHz Turn-on time t -25 - ns on *2 I = 1.5A, I = 150mA, C B1 t Storage time *2 - 300 - ns stg I =-150mA, V ~ 12V B2 CC Fall time t *2 -20 - ns f *1 Pulsed *2 See switching time test circuit www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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