QS5W2TR ROHM

QS5W2 Datasheet Middle Power Transistor (50V / 3A) llOutline Parameter Tr1 and Tr2 SOT-25T V 50V CEO I 3A C TSMT5 llFeatures llInner circuit 1)Low saturation voltage, typically V =350mV (Max.) ( I /I =1A/50mA) CE(sat) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-25T QS5W2 2928 TR 180 8 3000 W02 (TSMT5) www.rohm.com 1/6 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. QS5W2 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 6 V EBO I 3 A C Collector current *1 I 6 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 100A 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 50V - - 1.0 A CBO CB I V = 4V Emitter cut-off current - - 1.0 A EBO EB *5 Collector-emitter saturation voltage V I = 1A, I = 50mA - 130 350 mV CE(sat) C B h V = 3V, I = 50mA DC current gain 180 - 450 - FE CE C V = 10V,I = -500mA CE E *5 f Transition frequency - 320 - MHz T f = 100MHz V = 10V,I = 0A CB E Output capacitance C - 13 - pF ob f = 1MHz t Turn-On time - 50 - ns on I = 1.5A,V 10V C CC t I = 0.15A Storage time - 450 - ns stg B1 I = -0.15A B2 Fall time t - 80 - ns f (See test circuit) *1 Pw=10ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board( 25250.8mm). *4 900mW per element must not be exceeded. *5 Pulsed www.rohm.com 2/6 20151118 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.