Product Information

QS5U28TR

QS5U28TR electronic component of ROHM

Datasheet
P-Channel 20 V 2A (Ta) 1.25W (Ta) Surface Mount TSMT5
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8469 ea
Line Total: USD 0.85

4164 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4135 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

QS5U28TR
ROHM

1 : USD 0.69
10 : USD 0.6095
100 : USD 0.4313
500 : USD 0.3703
1000 : USD 0.3243
3000 : USD 0.2737

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Continuous Drain Current
Operating Temperature Classification
Operating Temp Range
Polarity
Gate-Source Voltage Max
Number Of Elements
Power Dissipation
Mounting
Drain-Source On-Volt
Package Type
Rad Hardened
Type
Pin Count
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

QS5U28 Datasheet 2.5V Drive Pch+SBD MOSFET llOutline TSMT5 V -20V DSS R (Max.) 245m DS(on) I 2.0A D P 1.25W D llInner circuit llFeatures 1) The QS5U28 combines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast swicthing 3) Low voltage drive (2.5V drive). 4) Built-in Low V schottky barrier diode. F 5) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Load switch, DC/ DC conversion Basic ordering unit (pcs) 3000 Taping code TR Marking U28 llAbsolute maximum ratings (T = 25C) a <MOSFET> Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS V Gate - Source voltage 12 V GSS I Continuous drain current 2.0 A D *1 Pulsed drain current I 8.0 A D, pulse Continuous source current (body diode) I -1.0 A S *1 Pulsed source current (body diode) I -8.0 A S, pulse *3 Power dissipation P 0.9 W/element D T Junction temperature 150 j www.rohm.com 1/10 2014 ROHM Co., Ltd. All rights reserved. 20130609 - Rev.001 QS5U28 Datasheet llAbsolute maximum ratings (T = 25C) a <SBD> Parameter Symbol Value Unit Repetitive peak reverse voltage V 25 V RM Reverse voltage V 20 V R Forward current I 1.0 A F *2 I Forward current surge peak 3.0 A FSM *3 P Power dissipation 0.7 W/element D T Junction temperature 150 j <MOSFET + SBD> Parameter Symbol Value Unit *3 P Power dissipation 1.25 W/total D T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. Gate - Source leakage current I V = 12V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current V Gate threshold voltage V = -10V, I = -1mA -0.7 - -2.0 V GS(th) DS D V = -4.5V, I = -2.0A - 90 125 GS D Static drain - source *4 R V = -4V, I = -2.0A - 97 135 m DS(on) GS D on - state resistance V = -2.5V, I = -1.0A - 175 245 GS D *4 Transconductance g V = -10V, I = -1.0A 1.6 - - S fs DS D www.rohm.com 2/10 20130609 - Rev.001 2014 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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