R6004PND3FRA
Datasheet
Nch 600V 4A Power MOSFET
llOutline
V 600V
DSS
DPAK
R (Max.) 1.8
DS(on)
TO-252
I 4.0A
D
P 65W
D
llInner circuit
llFeatures
1) Low on-resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Pb-free plating ; RoHS compliant
5) AEC-Q101 Qualified
llPackaging specifications
Embossed
Packing
Tape
Reel size (mm) 330
llApplication Tape width (mm) 16
Type
Switching Power Supply Quantity (pcs) 2500
Taping code TL
Marking R6004PND3
llAbsolute maximum ratings (T = 25C ,unless otherwise specified)
a
Parameter Symbol Value Unit
V
Drain - Source voltage 600 V
DSS
*1
Continuous drain current (T = 25C) I
4.0 A
c D
*2
I
Pulsed drain current 16 A
DP
Gate - Source voltage V 25 V
GSS
*3
Avalanche current, single pulse I 2.0 A
AS
*3
E
Avalanche energy, single pulse 1.1 mJ
AS
*4
Power dissipation (T = 25C) P
65 W
c D
Junction temperature T 150
j
T
Operating junction and storage temperature range -55 to +150
stg
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2019 ROHM Co., Ltd. All rights reserved. 1/11 20190529 - Rev.002
R6004PND3FRA
Datasheet
llThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
*4
Thermal resistance, junction - case R - - 1.91 /W
thJC
*5
R
Thermal resistance, junction - ambient - - 100 /W
thJA
T
Soldering temperature, wavesoldering for 10s - - 265
sold
llElectrical characteristics (T = 25C)
a
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - Source breakdown
V V = 0V, I = 1mA
600 - - V
(BR)DSS GS D
voltage
Zero gate voltage
I
V = 600V, V = 0V - - 100 A
DSS DS GS
drain current
I V = 25V, V = 0V
Gate - Source leakage current - - 10 A
GSS
GS DS
V
Gate threshold voltage V = 10V, I = 1mA 2.5 - 4.5 V
GS(th) DS D
Static drain - source
*6
R
V = 10V, I = 2.0A - 1.4 1.8
DS(on) GS D
on - state resistance
Gate resistance R f = 1MHz, open drain - 7.5 -
G
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2/11 20190529 - Rev.002
2019 ROHM Co., Ltd. All rights reserved.