Product Information

RCD041N25TL

RCD041N25TL electronic component of ROHM

Datasheet
Trans MOSFET N-CH 250V 4A Automotive 3-Pin(2+Tab) CPT T/R

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

154: USD 0.2631 ea
Line Total: USD 40.52

4850 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 154  Multiples: 1
Pack Size: 1
Availability Price Quantity
2337 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 184
Multiples : 1
184 : USD 0.5169
250 : USD 0.5065

320 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 184
Multiples : 1
184 : USD 0.5433

4850 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 154
Multiples : 1
154 : USD 0.2631
200 : USD 0.2617
500 : USD 0.26
1000 : USD 0.2535
2000 : USD 0.2484

     
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RCD041N25 Nch 250V 4.0A Power MOSFET Data Sheet l Outline V 250V DSS CPT3 (SC-63) R (Max.) 1300mW DS(on) <SOT-428> (3) I 4.0A D (2) (1) P 20W D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking C41N25 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 250 V DSS *1 T = 25C I 4.0 A c D Continuous drain current *1 T = 100C A I 2.2 c D *2 Pulsed drain current I 16 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 1.61 mJ E AS *3 Avalanche current I 2.0 A AR T = 25C P 20 W c D Power dissipation *4 P T = 25C 0.85 W D a T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 1/12Data Sheet RCD041N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage drain current I mA DSS V = 250V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.5 - 5.5 V GS (th) DS D V = 10V, I = 2.0A - 930 1300 GS D Static drain - source *5 V = 10V, I = 2.0A R mW GS D DS(on) on - state resistance - 1950 2730 T = 125C j g V = 10V, I = 2.0A Forward transfer admittance 1.1 2.2 - S fs DS D www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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