RB085B-30TL ROHM

Data Sheet Schottky Barrier Diode RB085B-30 Applications Dimensions(Unit : mm) Land size figure(Unit : mm) General rectification 6.0 Features 1.6 1.6 1)Power mold type.(CPD) 2)Low V F 3)High reliability CPD 2.3 2.3 Construction Structure (2) Silicon epitaxial planar (1) (3) Taping specifications(Unit : mm) Absolute maximum ratings(Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 35 V RM Reverse voltage (DC) V 30 V R Average rectified forward current(*1) 10 Io A I Forward current surge peak (60Hz / 1cyc)(*1) 35 A FSM Junction temperature Tj 150 C Storage temperature 40 to 150 Tstg C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=105 C Electrical characteristics(Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.48 V I =4.0A F F Reverse current I - - 300 A V =30V R R Thermal impedance jc -- 6.0 C/W junction to case www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.E 3.0 2.0 6.0RB085B-30 Data Sheet Electrical characteristics curves 10000 Ta=150 C 10 1000000 Ta=125 C f=1MHz 100000 Ta=150 C Ta=125 C 10000 Ta=75 C Ta=25 C 1000 1 1000 Ta=75C Ta=-25C Ta=25 C 100 10 100 0.1 Ta=-25 C 1 0.1 0.01 10 0.01 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R R FORWARD VOLTAGE : V (mV) F V -I CHARACTERISTICS V -Ct CHARACTERISTICS R R R V -I CHARACTERISTICS F F 460 2000 200 1950 180 Ta=25 C Ta=25 C Ta=25 C f=1MHz I =4A V =30V F R 1900 450 160 V =0V n=30pcs n=30pcs R 1850 140 n=10pcs 440 1800 120 1750 100 AVE:41.0uA 1700 430 AVE:1617.3pF 80 1650 60 1600 420 40 AVE:429.3mV 1550 20 1500 410 0 V DISPERSION MAP F I DISPERSION MAP R Ct DISPERSION MAP 30 1000 300 Ta=25 I =0.5A 25 F 250 Ifsm 1cyc I =1A R Ifsm Irr=0.25*I R 20 200 8.3ms n=10pcs 8.3ms 8.3ms 1cyc 15 AVE:19.3ns 100 150 AVE:63.0A 10 100 5 50 0 10 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM Mounted on a epoxy board =5A IM=100mA IF 5 1000 100 1ms time Rth(j-a) 4 300us Ifsm D=1/2 t DC 10 3 Rth(j-c) Sin(=180) 100 2 1 1 10 0.1 0 110 100 0.001 0.01 0.1 1 10 100 1000 0 5 10 15 TIME : t(ms) TIME : t(s) I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.E PEAK SURGE PEAK SURGE FORWARD CURRENT:I A) FSM( FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) F FORWARD CURRENT : I (A) FSM F REVERSE CURRENT:I (uA) R TRANSIENT REVERSE CURRENT:I (uA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (C/W) PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER CAPACITANCE BETWEEN FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W) TERMINALS:Ct(pF)