RB751CS-40T2RA

Schottky Barrier Diode RB751CS-40 Datasheet lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm) Low current rectification 0 .1 6 0 .0 5 0.55 0 .6 0 .0 5 lFeatures 1) Ultra Small mold type (VMN2) VMN2 Low V 2) F lStructure Cathode 0.156 3) High reliability 0 .3 7 0 .0 3 0 .3 5 0 .1 ROHM : VMN2 dot (year week factory)+day lConstruction Anode Silicon epitaxial planar lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta= 25C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) V 40 V RM V 30 Reverse voltage (DC) V R 30 Average rectified forward current Io mA Forward current surge peak (60Hz 1cyc) I 200 mA FSM Junction temperature Tj 125 C Storage temperature Tstg -40 to +125 C lElectrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =1mA Forward voltage - - 0.37 V F F I V =30V Reverse current - - 0.5 mA R R V =1V, f=1MHz Capacitance between terminals Ct - 2 - pF R www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 1/5 Not Recommended for New Designs 0 .9 0 .0 5 1 .0 0 .0 5 0.45 0.45 0.5 Data Sheet RB751CS-40 lElectrical characteristic curves 100 100000 Tj = 75 C Tj = 125 C 10 10000 Tj = 125 C 1000 1 Tj = 75 C Tj = 25 C 100 0.1 Tj = -25 C Tj = 25 C 10 0.01 Tj = -25 C 1 0.001 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10 330 f = 1MHz Tj=25 C I =1mA F 320 n=30pcs AVE : 304.2mV 310 1 300 290 0.1 280 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 2/5 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT : I (mA) F TERMINALS : Ct(pF) FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I (nA) F R