RBE05AS20AT2R

Schottky Barrier Diode RBE05AS20A Datasheet lApplication lExternal dimensions (Unit : mm) lLand size figure (Unit : mm) Small current rectification 0.6 lFeatures 1)Ultra small mold type.(VML2) 2)Low V F VML2 3)High reliability lStructure ROHM : VML2 JEDEC : - JEITA : - dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Tc = 25C) Parameter Symbol Limits Unit V 30 Reverse voltage (repetitive peak) V RM V 20 Reverse voltage (DC) V R Average rectified forward current Io 500 mA I Forward current surge peak (60Hz 1cyc) 1 A FSM 125 Junction temperature Tj C Storage temperature Tstg -40 to +125 C lElectrical characteristics (Tj = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =500mA Forward voltage - - 0.53 V F F I V =20V Reverse current - - 150 mA R R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.A 1/4 0.2 0.8 Data Sheet RBE05AS20A 1000 100000 10000 Ta = 75 C Ta = 125 C 100 1000 Ta = 125 C 100 Ta = 75 C Ta = 25 C 10 10 Ta = 25 C Ta = -25 C 1 Ta = -25 C 1 0.1 0 100 200 300 400 500 0 5 10 15 20 25 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 450 f = 1MHz Ta=25 C 445 I =500mA F n=30pcs 440 435 AVE : 438.4mV 430 10 425 420 415 410 405 1 400 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 80 45 Ta=25 C Ta=25 C 44 V =20V R f=1MHz n=30pcs V =0V R 70 43 n=10pcs 42 AVE : 40.56pF 60 41 AVE : 47.6 mA 40 50 39 38 40 37 36 30 35 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT : I ( mA) FORWARD CURRENT : I (mA) R F TERMINALS : Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I ( mA) R F TERMINALS : Ct(pF)