RF1501NS3STL ROHM

Data Sheet Super Fast Recovery Diode RF1501NS3S Series Dimensions (Unit : mm) Land size figure (Unit : mm) Ultra Fast Recovery RF1501 Applications NS3S General rectification Features 1)Ultra low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Year, Week and Day Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25 C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 350 V RM Reverse voltage V Direct voltage 300 V R 60Hz half sin wave resistive load at Tc=54C Average rectified forward current Io 20 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature - + C Tstg 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit I =20A Forward voltage V 1.35 1.5 V F F Reverse current I V =300V 0.06 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 22 30 ns F R R Thermal resistance Rth(j-c) junction to case 2.5 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.A 1/4Data Sheet RF1501NS3S 100 1000000 Tj=150C 100000 Tj=150C 10 Tj=125C Tj=125C 10000 Tj=25C 1 1000 Tj=75C Tj=75C 0.1 100 Tj=25C 0.01 10 0.001 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 FORWARD VOLTAGEV (mV) F REVERSE VOLTAGEV (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1000 1400 f=1MHz I =20A F Tj=25C 1300 100 1200 AVE:1234mV 1100 10 1000 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 1000 400 V =300V R 390 f=1MHz Tj=25C V =0V R 380 Tj=25C 370 100 AVE:18.2nA 360 350 340 AVE:356pF 10 330 320 310 1 300 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) REVERSE CURRENT:I (nA) F R TERMINALS:Ct(pF)