Product Information

RF1501NS3STL

Hot RF1501NS3STL electronic component of ROHM

Datasheet
Rectifiers DIODE FAST REC 350V 20.0A D2PAK
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

71: USD 0.5368 ea
Line Total: USD 38.11

97 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 71  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
812 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 1.587
10 : USD 1.357
100 : USD 1.1051
500 : USD 0.9637
1000 : USD 0.9488
2000 : USD 0.9005
5000 : USD 0.8694
10000 : USD 0.7935

800 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 95
Multiples : 1
95 : USD 1.041
100 : USD 1.0202

97 - WHS 3


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 71
Multiples : 1
71 : USD 0.5368

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Product
Brand
Maximum Reverse Leakage Current
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RF1501NS3S Series Dimensions (Unit : mm) Land size figure (Unit : mm) Ultra Fast Recovery RF1501 Applications NS3S General rectification Features 1)Ultra low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Year, Week and Day Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25 C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 350 V RM Reverse voltage V Direct voltage 300 V R 60Hz half sin wave resistive load at Tc=54C Average rectified forward current Io 20 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature - + C Tstg 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit I =20A Forward voltage V 1.35 1.5 V F F Reverse current I V =300V 0.06 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 22 30 ns F R R Thermal resistance Rth(j-c) junction to case 2.5 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.A 1/4Data Sheet RF1501NS3S 100 1000000 Tj=150C 100000 Tj=150C 10 Tj=125C Tj=125C 10000 Tj=25C 1 1000 Tj=75C Tj=75C 0.1 100 Tj=25C 0.01 10 0.001 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 FORWARD VOLTAGEV (mV) F REVERSE VOLTAGEV (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1000 1400 f=1MHz I =20A F Tj=25C 1300 100 1200 AVE:1234mV 1100 10 1000 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 1000 400 V =300V R 390 f=1MHz Tj=25C V =0V R 380 Tj=25C 370 100 AVE:18.2nA 360 350 340 AVE:356pF 10 330 320 310 1 300 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) REVERSE CURRENT:I (nA) F R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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