RFN10NS4STL ROHM

Data Sheet Super Fast Recovery Diode RFN10NS4S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery Applications General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm)  Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 430 V RM Reverse voltage V Direct voltage 430 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=75C 10 Io A (*1) Forward current surge peak I 80 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit I =10A Forward voltage V F 1.2 1.55 V F I V =430V 0.05 10 Reverse current R A R I =0.5A,I =1A,Irr=0.25I 18 30 Reverse recovery time trr F R R ns Junction to case 4.0 Thermal resistance Rth(j-c) C/W ROHMCOM WWW !LLR IGHTSRESER ED V ,TD /(-#O 2 1/4 2012.06 - Rev.A  Data Sheet RFN10NS4S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C 100 Tj=125 C 1 Tj=25 C Tj=75 C 10 Tj=25 C 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 450 FORWARD VOLTAGE:V (mV) F REVERSE VOLTAGE:V (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1250 100 1240 I =10A V =430V F R Tj=25 C Tj=25 C 1230 1220 1210 1200 10 AVE:1181mV 1190 1180 AVE:11.6nA 1170 1160 1150 1 V DISPERSION MAP F I DISPERSION MAP R 1000 200 f=1MHz f=1MHz 190 V =0V R Tj=25 C 180 170 100 160 150 140 10 130 AVE:157pF 120 110 1 100 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) TERMINALS:Ct(pF) F FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R