RFN10NS6STL ROHM

Data Sheet Super Fast Recovery Diode RFN10NS6S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery Applications RFN10 NS6S General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolu e Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=91C 10 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =10A Forward voltage F F 1.25 1.55 V V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 30 50 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A RFN10NS6S Data Sheet 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=150 C 1000 Tj=75 C Tj=125 C 100 Tj=75 C Tj=25 C 1 Tj=25 C 10 1 0.1 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 3000 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1400 1000 I =10A F V =600V R 1350 Tj=25 C Tj=25 C 1300 100 1250 AVE:1261mV 1200 10 AVE:30.5nA 1150 1 1100 V DISPERSION MAP I DISPERSION MAP F R 1000 180 f=1MHz f=1MHz V =0V R 175 Tj=25 C 100 170 165 AVE:169pF 10 160 155 1 150 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) R Ct DISPERSION MAP V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R