Product Information

RFN1L7STE25

RFN1L7STE25 electronic component of ROHM

Datasheet
ROHM Semiconductor Diodes - General Purpose, Power, Switching Diode Switching 700V 0.8A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 0.1636 ea
Line Total: USD 245.4

0 - Global Stock
MOQ: 1500  Multiples: 1500
Pack Size: 1500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4711
10 : USD 0.4117
100 : USD 0.3286
500 : USD 0.2753
1000 : USD 0.1483
1500 : USD 0.1293
9000 : USD 0.1234
24000 : USD 0.1234
49500 : USD 0.1199

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFN1L7S Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery 2.0 2.60.2 Applications General rectification 86 65 0.10.02 0.1 PMDS 2.00.2 Features 1.50.2 1)Small power mold type. PMDS Structure 2)Low switching loss ROHM : PMDS 3)Low forward voltage JEDEC : SOD-106 Manufacture date Construction Taping dimensions (Unit : mm) Silicon epitaxial planer 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (TI=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V D0.5 700 V RM Reverse voltage V Direct voltage 700 V R Glass epoxy substrate mounted Average rectified forward current Io Tl=115C 0.8 A R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive I Forward current surge peak 15 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit I =0.8A Forward voltage V 1.15 1.5 V F F V =700V Reverse current I 0.01 1 A R R Reverse recovery time I =0.5A,I =1A,Irr=0.25I trr 45 80 ns F R R Thermal resistance Rth(j-l) junction to lead 23 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 4.50.2 1.20.3 5.00.3 2.0 5.30.1 0.05 9.50.1 5.50.05 1.750.1 120.2 4.2Data Sheet RFN1L7S 10 10000 Tj=150 C 1000 Tj=150 C Tj=125 C 1 Tj=125 C 100 Tj=75 C Tj=75 C 0.1 10 Tj=25 C Tj=25 C 1 0.01 0 100 200 300 400 500 600 700 0 500 1000 1500 2000 2500 FORWARD VOLTAGEV (mV) F REVERSE VOLTAGE V (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1300 100 f=1MHz Tj=25 C 1250 I =0.8A F n=20pcs 1200 1150 10 1100 1050 1000 AVE:1075.5mV 950 1 900 0 5 10 15 20 25 30 V DISPERSION MAP REVERSE VOLTAGE:V (V) F R V -Ct CHARACTERISTICS R 1000 40 Tj=25 C Tj=25 C f=1MHz V =700V 35 R V =0V R n=20pcs n=10pcs 100 30 25 AVE:26.4pF 10 20 AVE:17.3nA 15 1 10 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) F R TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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