RFN10TB4S ROHM

Data Sheet Super Fast Recovery Diode RFN10TB4S Serise Dimensions(Unit : mm) Structure Standard Fast Recovery Applications General rectification Features 1)Low switching loss RFN10T B4S 2)High current overload capacity Construction Silicon epitaxial planer type 2.54 d 0.5 2.54 d 0.5 ROHM : TO220FN Manufacture Year Week Absolu e Maximum Ratings(Tl=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 430 V RM Reverse voltage V Direct voltage 430 V R Average rectified foward current 60Hz Half sin wave , Resistive load Tc=93C 10 Io A Forward current surge peak I 60Hz Half sin wave , Non-repetitive at Tj=25C 80 A FSM Junction temperature 150 Tj r C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =10A 1.2 1.55 Forward voltage F V F V =430V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 18 30 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Not Recommended for New Designs RFN10TB4S Data Sheet 100000 100 Tj=150 C 10000 Tj=125 C 10 1000 Tj=150 C Tj=75 C Tj=125 C 100 Tj=75 C 1 Tj=25 C Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 450 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1250 1000 V =430V 1240 I =10A R F Tj=25 C Tj=25 C 1230 1220 100 AVE:1181mV 1210 AVE:11.6nA 1200 1190 10 1180 1170 1160 1150 1 V DISPERSION MAP F I DISPERSION MAP R 200 1000 f=1MHz f=1MHz 190 V =0V R 180 Tj=25 C 170 100 160 150 AVE:157pF 140 10 130 120 110 1 100 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) F F CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R