RGS60TS65DHRC11 ROHM

RGS60TS65DHRC11 electronic component of ROHM
RGS60TS65DHRC11 ROHM
RGS60TS65DHRC11 IGBT Transistors
RGS60TS65DHRC11  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RGS60TS65DHRC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGS60TS65DHRC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. RGS60TS65DHRC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors 650V 30A FIELD STOP TRENCH
Datasheet: RGS60TS65DHRC11 Datasheet (PDF)
Price (USD)
1: USD 7.85 ea
Line Total: USD 7.85 
Availability : 338
  
Ship by Wed. 13 Aug to Fri. 15 Aug
QtyUnit Price
1$ 7.85
10$ 4.818
100$ 4.169
450$ 3.96

Availability 338
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.85
10$ 4.818
100$ 4.169
450$ 3.96


Availability 407
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.994
4$ 6.16
9$ 5.824
90$ 5.6

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGS60TS65DHRC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGS60TS65DHRC11 and other electronic components in the IGBT Transistors category and beyond.

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RGS60TS65D 650V 30A Field Stop Trench IGBT Data Sheet lOutline TO-247N V 650V CES I 30A C(100C) V 1.65V CE(sat) (Typ.) P 223W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) Short Circuit Withstand Time 8s (1) Gate (2) Collector *1 3) Qualified to AEC-Q101 (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplications General Inverter Reel Size (mm) - for Automotive and Industrial Use Tape Width (mm) - Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS60TS65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 56 A C C Collector Current T = 100C I 30 A C C *1 Pulsed Collector Current 90 A I CP T = 25C I 56 A C F Diode Forward Current T = 100C I 30 A C F *1 Diode Pulsed Forward Current 90 A I FP T = 25C P 223 W C D Power Dissipation T = 100C P 111 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.A 1/11Data Sheet RGS60TS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.67 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 1.17 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage V = 650V, V = 0V CE GE I T = 25C Collector Cut - off Current - - 10 A CES j T = 175C 5 mA j I V = 30V, V = 0V Gate - Emitter Leakage Current - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 1.5mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 30A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.10 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.A 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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