Product Information

RGS60TS65DHRC11

RGS60TS65DHRC11 electronic component of ROHM

Datasheet
IGBT Transistors 650V 30A FIELD STOP TRENCH
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.8885 ea
Line Total: USD 6.89

436 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
435 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 6.8885
10 : USD 6.003
25 : USD 5.014
100 : USD 4.7265
250 : USD 4.6805
450 : USD 4.3125
900 : USD 4.1745

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

RGS60TS65D 650V 30A Field Stop Trench IGBT Data Sheet lOutline TO-247N V 650V CES I 30A C(100C) V 1.65V CE(sat) (Typ.) P 223W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) Short Circuit Withstand Time 8s (1) Gate (2) Collector *1 3) Qualified to AEC-Q101 (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplications General Inverter Reel Size (mm) - for Automotive and Industrial Use Tape Width (mm) - Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS60TS65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 56 A C C Collector Current T = 100C I 30 A C C *1 Pulsed Collector Current 90 A I CP T = 25C I 56 A C F Diode Forward Current T = 100C I 30 A C F *1 Diode Pulsed Forward Current 90 A I FP T = 25C P 223 W C D Power Dissipation T = 100C P 111 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.A 1/11Data Sheet RGS60TS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.67 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 1.17 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage V = 650V, V = 0V CE GE I T = 25C Collector Cut - off Current - - 10 A CES j T = 175C 5 mA j I V = 30V, V = 0V Gate - Emitter Leakage Current - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 1.5mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 30A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.10 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.07 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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