ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. AFGB30T65SQDN IGBT for Automotive Applications 2 650 V, 30 A, D PAK Features www.onsemi.com Maximum Junction Temperature: T = 175C J High Speed Switching Series BV V TYP I MAX CES CE(sat) C V = 1.6 V (typ.) I = 30 A CE(sat) C 650 V 1.6 V 120 A Low VF Soft Recovery Copackaged Diode AECQ101 Qualified C 100% of the Parts are Dynamically Tested (Note 1) Typical Applications Automotive On Board Charger G Automotive DC/DC Converter for HEV MAXIMUM RATINGS (T = 25C unless otherwise stated) E C Parameter Symbol Value Unit CollectortoEmitter Voltage V 650 V CES C GatetoEmitter Voltage V 20 V GES G Transient GatetoEmitter Voltage V 30 V E GES 2 D PAK Collector Current (T = 25C) I 60 A C C 3 LEAD CASE 418AJ Collector Current (T = 100C) 30 A C Pulsed Collector Current (Note 2) I 120 A CM MARKING DIAGRAM Diode Forward Current (T = 25C) I 40 A C F Diode Forward Current (T = 100C) 20 A C &Y&Z&3&K Pulsed Diode Maximum Forward Current I 120 A FM AFGB (Note 2) 30T65SQDN Maximum Power Dissipation (T = 25C) P 220 W D C Maximum Power Dissipation (T = 100C) 110 W C Operating Junction and Storage T , T 55 to C J STG Temperature Range +175 &Y = ON Semiconductor Logo Stresses exceeding those listed in the Maximum Ratings table may damage the &Z = Assembly Plant Code device. If any of these limits are exceeded, device functionality should not be &3 = 3Digit Date Code assumed, damage may occur and reliability may be affected. &K = 2Digit Lot Traceability Code 1. V = 400 V, V = 15 V, I = 90 A, R = 100 , Inductive Load CC GE C G AFGB30T65SQDN = Specific Device Code 2. Repetitive rating: pulse width limited by max. Junction temperature 2 3. Surfacemounted on FR4 board using 1 in pad size, 1 oz Cu pad. 4. The entire application environment impacts the thermal resistance values ORDERING INFORMATION shown, they are not constants and are only valid for the particular conditions noted. Device Package Shipping AFGB30T65SQDN D2PAK 800 Units / (TO263) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2019 Rev. 0 AFGB30T65SQDN/D