RQ3G100GNTB ROHM

RQ3G100GNTB electronic component of ROHM
RQ3G100GNTB ROHM
RQ3G100GNTB MOSFETs
RQ3G100GNTB  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RQ3G100GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3G100GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RQ3G100GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ3G100GNTB Datasheet (PDF)
Price (USD)
1539: USD 0.169 ea
Line Total: USD 260.09 
Availability : 1746
  
Ship by Tue. 12 Aug to Mon. 18 Aug
QtyUnit Price
1539$ 0.169
1887$ 0.1378

Availability 10956
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6863
10$ 0.4637
100$ 0.3082
500$ 0.2376
1000$ 0.2123
3000$ 0.1694
6000$ 0.1628
9000$ 0.1617


Availability 2890
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 314
Multiples : 1
QtyUnit Price
314$ 0.8281


Availability 1746
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1539
Multiples : 1
QtyUnit Price
1539$ 0.169
1887$ 0.1378


Availability 2698
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 498
Multiples : 1
QtyUnit Price
498$ 0.5222
519$ 0.5013
539$ 0.4832
1000$ 0.4495
2500$ 0.4361

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ3G100GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3G100GNTB and other electronic components in the MOSFETs category and beyond.

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RQ3G100GN Nch 40V 27A Power MOSFET Datasheet llOutline V 40V DSS R (Max.) 14.3m DS(on) HSMT8 I 27A D P 15W D llInner circuit llFeatures 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Taping code TB Marking G100GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 27 A c D Continuous drain current T = 25C I 10 A a D *2 I Pulsed drain current 40 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 10 A AS *3 E Avalanche energy, single pulse 15 mJ AS *1 P 15 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171215 - Rev.003 RQ3G100GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 8.3 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = 1mA 1.2 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 10A - 11.0 14.3 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 10A - 14.1 18.3 GS D R Gate resistance f=1MHz, open drain - 2.3 - G Forward Transfer *5 Y V = 5V, I = 10A 7.5 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.2mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20171215 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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