RQ6E035ATTCR ROHM

RQ6E035ATTCR electronic component of ROHM
RQ6E035ATTCR ROHM
RQ6E035ATTCR MOSFETs
RQ6E035ATTCR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RQ6E035ATTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6E035ATTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RQ6E035ATTCR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ6E035ATTCR Datasheet (PDF)
Price (USD)
774: USD 0.3362 ea
Line Total: USD 260.22 
Availability : 2910
  
Ship by Fri. 15 Aug to Thu. 21 Aug
QtyUnit Price
774$ 0.3362
803$ 0.3241
1000$ 0.3136
2500$ 0.2925

Availability 3114
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5487
10$ 0.3388
100$ 0.1656
500$ 0.1441
1000$ 0.1331
3000$ 0.1199
6000$ 0.1023
9000$ 0.0935
24000$ 0.0891


Availability 2657
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 774
Multiples : 1
QtyUnit Price
774$ 0.3362
803$ 0.3241
1000$ 0.3136
2500$ 0.2925


Availability 2910
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 774
Multiples : 1
QtyUnit Price
774$ 0.3362
803$ 0.3241
1000$ 0.3136
2500$ 0.2925


Availability 4549
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 2854
Multiples : 1
QtyUnit Price
2854$ 0.0912
3553$ 0.0732

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ6E035ATTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6E035ATTCR and other electronic components in the MOSFETs category and beyond.

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RQ6E035AT Datasheet Pch -30V -3.5A Small Signal MOSFET llOutline SOT-457T V -30V DSS SC-95 R (Max.) 50m DS(on) TSMT6 I 3.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT6) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCR Marking JR llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 3.5 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I -3.5 A AS *2 E Avalanche energy, single pulse 9.0 mJ AS *3 P 1.25 W D Power dissipation *4 P 0.95 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170317 - Rev.003 RQ6E035AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 /W thJA Thermal resistance, junction - ambient *4 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = -1mA -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -3.5A - 38 50 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -3.5A - 54 70 GS D R Gate resistance f = 1MHz, open drain - 14 - G Forward Transfer *5 Y V = -5V, I = -3.5A 3.2 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic boad (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2/11 20170317 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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