RQ3E160ADTB ROHM

RQ3E160ADTB electronic component of ROHM
RQ3E160ADTB ROHM
RQ3E160ADTB MOSFETs
RQ3E160ADTB  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RQ3E160ADTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3E160ADTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RQ3E160ADTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 30V 16A Middle Power MOSFET
Datasheet: RQ3E160ADTB Datasheet (PDF)
Price (USD)
1: USD 0.5875 ea
Line Total: USD 0.59 
Availability : 5498
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 0.5875
10$ 0.5075
100$ 0.345
500$ 0.3245
1000$ 0.3201
3000$ 0.2695
6000$ 0.2673

Availability 96
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5242
10$ 1.386
30$ 0.9834
100$ 0.8273
500$ 0.8011
1000$ 0.788


Availability 5498
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5875
10$ 0.5075
100$ 0.345
500$ 0.3245
1000$ 0.3201
3000$ 0.2695
6000$ 0.2673


Availability 1939
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 540
Multiples : 1
QtyUnit Price
540$ 0.4819
563$ 0.4625
584$ 0.4459
1000$ 0.4148

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ3E160ADTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3E160ADTB and other electronic components in the MOSFETs category and beyond.

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RQ3E160AD Datasheet Nch 30V 16A Middle Power MOSFET llOutline V 30V DSS R (Max.) 4.5m DS(on) HSMT8 I 16A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package. 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 Taping code TB Marking E160AD llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS I Continuous drain current 16 A D *2 I Pulsed drain current 64 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 16 A AS *3 E Avalanche energy, single pulse 23 mJ AS *4 P Power dissipation 2 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RQ3E160AD Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - ambient - 62.5 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 20.84 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.25 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 16A - 3.5 4.5 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 16A - 5.0 7.0 GS D Forward Transfer *5 Y V = 10V, I = 8A 7.5 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 10H, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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