RSD221N06TL ROHM

RSD221N06TL electronic component of ROHM
RSD221N06TL ROHM
RSD221N06TL MOSFETs
RSD221N06TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RSD221N06TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSD221N06TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RSD221N06TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 22A
Datasheet: RSD221N06TL Datasheet (PDF)
Price (USD)
190: USD 1.3711 ea
Line Total: USD 260.51 
Availability : 5885
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
190$ 1.3711
199$ 1.3098
250$ 1.2572
500$ 1.1652
1000$ 1.1273
2500$ 1.0939
5000$ 1.0645

Availability 5885
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 190
Multiples : 1
QtyUnit Price
190$ 1.3711
199$ 1.3098
250$ 1.2572
500$ 1.1652
1000$ 1.1273
2500$ 1.0939
5000$ 1.0645


Availability 1261
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 190
Multiples : 1
QtyUnit Price
190$ 1.3711
199$ 1.3098
250$ 1.2572
500$ 1.1652
1000$ 1.1273

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSD221N06TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSD221N06TL and other electronic components in the MOSFETs category and beyond.

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RSD221N06 Nch 60V 22A Power MOSFET Datasheet Outline V 60V DSS CPT3 (SC-63) R (Max.) 26m DS(on) <SOT-428> (3) I 22A D (2) (1) P 20W D Features Inner circuit (3) 1) Low on-resistance. (1) Gate 1 2) Fast switching speed. (2) Drain (3) Source (1) 3) Drive circuits can be simple. 2 1 ESD PROTECTION DIODE 4) Parallel use is easy. 2 BODY DIODE 5) Pb-free lead plating RoHS compliant (2) 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking 221N06 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 T = 25C I 22 A c D Continuous drain current *1 T = 100C I 11 A c D *2 Pulsed drain current A I 44 D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 17.8 mJ E AS *3 Avalanche current I 22 A AR T = 25C P 20 W c D Power dissipation T = 25C P 0.85 W a D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 1/12 Not Recommended for New DesignsData Sheet RSD221N06 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown voltage V V = 0V, I = 1mA 60 - - V (BR)DSS GS D V = 60V, V = 0V DS GS - -1 T = 25C j Zero gate voltage drain current I A DSS V = 60V, V = 0V DS GS - - 100 T = 125C j I V = 20V, V = 0V Gate - Source leakage current -- 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 3.0 V GS (th) DS D V = 10V, I = 22A -18 26 GS D V = 4.5V, I = 22A -21 30 GS D Static drain - source *4 V = 4.0V, I = 22A R -23 33 m GS D DS(on) on - state resistance V = 10V, I = 22A GS D -32 45 T = 125C j g V = 10V, I = 22A Forward transfer admittance 12 24 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 2/12 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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