RSJ250P10 Datasheet Pch -100V -25A Power MOSFET llOutline TO-263S V -100V DSS SC-83 R (Max.) 63m DS(on) LPT(S) I 25A D P 50W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching speed 3) High power small mold package 4) Pb-free plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Quantity (pcs) 1000 Taping code TL Marking RSJ250P10 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -100 V DSS *1 I Continuous drain current 25 A D *2 I Pulsed drain current 50 A DP V Gate - Source voltage 20 V GSS *1 P Power dissipation 50 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20191018 - Rev.003 RSJ250P10 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 2.5 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -91.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -100V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V , I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -25A - 45 63 GS D Static drain - source *3 R V = -4.5V, I = -12.5A - 48 67 m DS(on) GS D on - state resistance V = -4.0V, I = -12.5A - 50 70 GS D R Gate resistance f = 1MHz, open drain - 4.3 - G Forward Transfer *3 Y V = -10V, I = -25A 20 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 Pulsed www.rohm.com 2/11 20191018 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.