SCT2080KEC ROHM

SCT2080KEC electronic component of ROHM
SCT2080KEC ROHM
SCT2080KEC MOSFETs
SCT2080KEC  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SCT2080KEC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT2080KEC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SCT2080KEC
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET SiC N-Ch MOSFET wout SBD 18V
Datasheet: SCT2080KEC Datasheet (PDF)
Price (USD)
9: USD 9.2265 ea
Line Total: USD 83.04 
Availability : 0
  
QtyUnit Price
9$ 9.2265

Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 360
QtyUnit Price
1$ 23.4375
100$ 18.99


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 30.94
10$ 27.5138
100$ 23.495
500$ 21.331


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 2
Multiples : 1
QtyUnit Price
2$ 21.7146
5$ 20.9104
25$ 20.1061
50$ 20.1061
150$ 20.1061


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 360
Multiples : 360
QtyUnit Price
360$ 19.2043


Availability 0
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 25.0269
10$ 23.1771
25$ 21.138
100$ 19.5446
250$ 18.2409


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 9
Multiples : 1
QtyUnit Price
9$ 9.2265


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 30
Multiples : 30
QtyUnit Price
30$ 19.7321


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 4
Multiples : 1
QtyUnit Price
4$ 29.2822


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 4
Multiples : 1
QtyUnit Price
4$ 34.7847

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT2080KEC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT2080KEC and other electronic components in the MOSFETs category and beyond.

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SCT2080KE N-channel SiC power MOSFET Datasheet lOutline TO-247 V 1200V DSS TO-247N R (Typ.) 80m DS(on) I 40A D lFeatures lInner circuit 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain 3) Fast reverse recovery (3) Source 4) Easy to parallel * Body Diode 5) Simple to drive *1 6) Pb-free lead plating RoHS compliant lPackaging specifications TO-247 TO-247N Package Packing Tube lApplication Reel size (mm) - Solar inverters Tape width (mm) - DC/DC converters Type Basic ordering unit (pcs) 30 Induction heating Packing code C C11 Motor drives Marking SCT2080KE lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *2 T = 25C I 40 A c D Continuous drain current *2 T = 100C I 28 A c D *3 Pulsed drain current I 80 A D,pulse Gate - Source voltage (DC) V V -6 to +22 GSS *4 Gate - Source surge voltage ( 300nsec) V V -10 to +26 surge GSS surge T =25C, See Fig.1 262 W C P Total power dissipation D T =100C, See Fig.1 130 W C T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50210-SCT2080KE 2019 ROHM Co., Ltd. All rights reserved. 1/12 28.Mar.2019 - rev.004 TSZ2211114001SCT2080KE Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -6V, V = 0V - - -100 nA GSS - GS DS V V = V , I = 4.4mA Gate threshold voltage 1.6 2.8 4.0 V GS (th) DS GS D lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R 7.80E-02 C 5.00E-03 th1 th1 R 1.97E-01 K/W C 1.80E-02 Ws/K th2 th2 R 1.62E-01 C 2.49E-01 th3 th3 www.rohm.com TSQ50210-SCT2080KE 2019 ROHM Co., Ltd. All rights reserved. 2/12 28.Mar.2019 - rev.004 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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