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SCT2080KEC

SCT2080KEC electronic component of ROHM
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Part No. SCT2080KEC
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET SiC N-Ch MOSFET wout SBD 18V
Datasheet: SCT2080KEC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 21.0465 ea
Line Total: USD 42.09

0 - Global Stock
MOQ: 2  Multiples: 30
Pack Size: 30
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 360
1 : USD 23.4375
100 : USD 18.99

0 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 30.94
10 : USD 27.5138
100 : USD 23.495
500 : USD 21.331

0 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 2
Multiples : 1
2 : USD 21.7146
5 : USD 20.9104
25 : USD 20.1061
50 : USD 20.1061
150 : USD 20.1061

0 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 360
Multiples : 360
360 : USD 19.2043

0 - WHS 5


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 25.0269
10 : USD 23.1771
25 : USD 21.138
100 : USD 19.5446
250 : USD 18.2409

0 - WHS 6


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 9
Multiples : 1
9 : USD 9.2265

0 - WHS 7


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 30
Multiples : 30
30 : USD 19.7321

0 - WHS 8


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 4
Multiples : 1
4 : USD 29.2822

0 - WHS 9


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 4
Multiples : 1
4 : USD 34.7847

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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We proudly offer the SCT2080KEC MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the SCT2080KEC MOSFET.

SCT2080KE N-channel SiC power MOSFET Datasheet lOutline TO-247 V 1200V DSS TO-247N R (Typ.) 80m DS(on) I 40A D lFeatures lInner circuit 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain 3) Fast reverse recovery (3) Source 4) Easy to parallel * Body Diode 5) Simple to drive *1 6) Pb-free lead plating RoHS compliant lPackaging specifications TO-247 TO-247N Package Packing Tube lApplication Reel size (mm) - Solar inverters Tape width (mm) - DC/DC converters Type Basic ordering unit (pcs) 30 Induction heating Packing code C C11 Motor drives Marking SCT2080KE lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *2 T = 25C I 40 A c D Continuous drain current *2 T = 100C I 28 A c D *3 Pulsed drain current I 80 A D,pulse Gate - Source voltage (DC) V V -6 to +22 GSS *4 Gate - Source surge voltage ( 300nsec) V V -10 to +26 surge GSS surge T =25C, See Fig.1 262 W C P Total power dissipation D T =100C, See Fig.1 130 W C T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50210-SCT2080KE 2019 ROHM Co., Ltd. All rights reserved. 1/12 28.Mar.2019 - rev.004 TSZ2211114001SCT2080KE Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -6V, V = 0V - - -100 nA GSS - GS DS V V = V , I = 4.4mA Gate threshold voltage 1.6 2.8 4.0 V GS (th) DS GS D lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R 7.80E-02 C 5.00E-03 th1 th1 R 1.97E-01 K/W C 1.80E-02 Ws/K th2 th2 R 1.62E-01 C 2.49E-01 th3 th3 www.rohm.com TSQ50210-SCT2080KE 2019 ROHM Co., Ltd. All rights reserved. 2/12 28.Mar.2019 - rev.004 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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