RUF025N02TL ROHM

RUF025N02TL electronic component of ROHM
RUF025N02TL ROHM
RUF025N02TL MOSFETs
RUF025N02TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RUF025N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUF025N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RUF025N02TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 2A
Datasheet: RUF025N02TL Datasheet (PDF)
Price (USD)
1: USD 0.6025 ea
Line Total: USD 0.6 
Availability : 17686
  
Ship by Wed. 01 Oct to Fri. 03 Oct
QtyUnit Price
1$ 0.6025
10$ 0.4538
100$ 0.3243
500$ 0.2827
1000$ 0.2662
3000$ 0.2266
9000$ 0.2178

Availability 17686
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6025
10$ 0.4538
100$ 0.3243
500$ 0.2827
1000$ 0.2662
3000$ 0.2266
9000$ 0.2178


Availability 5820
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 798
Multiples : 1
QtyUnit Price
798$ 0.326
828$ 0.3142
1000$ 0.3041
2500$ 0.2836
5000$ 0.276


Availability 644
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 359
Multiples : 1
QtyUnit Price
359$ 0.7254
500$ 0.5395


Availability 8153
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 547
Multiples : 1
QtyUnit Price
547$ 0.4755
570$ 0.4564
592$ 0.4399
1000$ 0.4092
2500$ 0.3971
5000$ 0.3865

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RUF025N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUF025N02TL and other electronic components in the MOSFETs category and beyond.

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RUF025N02 Datasheet Nch 20V 2.5A Middle Power MOSFET llOutline SOT-323T V 20V DSS R (Max.) 54m DS(on) TUMT3 I 2.5A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT3). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 5 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20151026 - Rev.001 RUF025N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.3 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2.5A - 39 54 GS D V = 2.5V, I = 2.5A - 49 68 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 1.3A - 65 91 GS D V = 1.5V, I = 0.5A - 80 160 GS D R Gate resistance f = 1MHz, open drain - 7.5 - G Forward Transfer *4 Y V = 10V, I = 2.5A 3.6 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20151026 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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