1.2V Drive Nch MOSFET RUU002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT3 (SC-70) <SOT-323> Features 1) High speed switing. 2) Small package(UMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T106 Basic ordering unit (pieces) 3000 1 RUU002N05 2 Absolute maximum ratings (Ta = 25C) (2) (1) (1) SOURCE Parameter Symbol Limits Unit (2) GATE 1 BODY DIODE (3) DRAIN 2 ESD PROTECTION DIODE Drain-source voltage V 50 V DSS Gate-source voltage V 8V GSS Continuous I 200 mA D Drain current *1*1 Pulsed I 800 mA DP Source current Continuous I 150 mA S *1*1 (Body Diode) Pulsed I 800 mA SP *2*2 Power dissipation P 200 mW D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw 10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Symbol Limits Unit * Channel to ambient Rth (ch-a) 625 C / W * Each terminal mounted on a recommended land. www.rohm.com 2010.06 - Rev.B 1/5 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs RUU002N05 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =8V, V =0V GSS GS DS Drain-source breakdown voltage V 50 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =50V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V =10V, I =1mA GS (th) DS D -1.6 2.2 I =200mA, V =4.5V D GS -1.7 2.4 I =200mA, V =2.5V D GS Static drain-source on-state * R DS (on) -1.9 2.7 I =100mA, V =1.8V D GS resistance -2.0 4.0 I =40mA, V =1.5V D GS -2.4 7.2 I =20mA, V =1.2V D GS * Forward transfer admittance l Y l 0.4 - - S I =200mA, V =10V fs D DS Input capacitance C -25 - pFV =10V iss DS Output capacitance C -6 - pFV =0V oss GS Reverse transfer capacitance C -3 - pFf=1MHz rss Turn-on delay time t ** -4 - nsI =100mA, V 30V d(on) D DD Rise time t ** -6 - nsV =4.5V r GS Turn-off delay time t ** -15 - nsR =300 d(off) L Fall time t ** -55 - nsR =10 f G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward voltage V -- 1.2 VI =200mA, V =0V SD s GS *Pulsed www.rohm.com 2010.06 - Rev.B 2/5 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs