RUS100N02 Datasheet Nch 20V 10A Middle Power MOSFET llOutline SOP8 V 20V DSS R (Max.) 12m DS(on) I 10A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (SOP8). 3) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RUS100N02 llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 20 V DSS I Continuous drain current 10 A D *1 I Pulsed drain current 36 A D,pulse V Gate - Source voltage 10 V GSS *2 P Power dissipation 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 1/11 20141001 - Rev.001 RUS100N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - 62.5 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 18.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - 2.5 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 10A - 8 12 GS D V = 2.5V, I = 10A - 9 13 GS D Static drain - source *3 R m DS(on) on - state resistance V = 1.8V, I = 5A - 11 16 GS D V = 1.5V, I = 2.5A - 13 19 GS D *3 g V = 10V, I = 10A Transconductance 15 - - S fs DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad *3 Pulsed www.rohm.com 2/11 20141001 - Rev.001 2014 ROHM Co., Ltd. All rights reserved.