RUR020N02TL ROHM

RUR020N02TL electronic component of ROHM
RUR020N02TL ROHM
RUR020N02TL MOSFETs
RUR020N02TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RUR020N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUR020N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RUR020N02TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET SW MOSFET MID PWR N-CH 20V 2A
Datasheet: RUR020N02TL Datasheet (PDF)
Price (USD)
5: USD 0.198 ea
Line Total: USD 0.99 
Availability : 2381
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
5$ 0.198
50$ 0.1716
150$ 0.1201
500$ 0.0985
3000$ 0.0944
6000$ 0.0918

Availability 5396
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.835
10$ 0.47
100$ 0.2979
500$ 0.2332
1000$ 0.2123
3000$ 0.165
9000$ 0.1573


Availability 18833
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 835
Multiples : 1
QtyUnit Price
835$ 0.3117
866$ 0.3006
1000$ 0.2907
2500$ 0.2713
5000$ 0.264
10000$ 0.2575


Availability 22523
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 293
Multiples : 1
QtyUnit Price
293$ 0.9243
500$ 0.5642
1000$ 0.3692
3000$ 0.3537
6000$ 0.265
12000$ 0.2375


Availability 2381
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.198
50$ 0.1716
150$ 0.1201
500$ 0.0985
3000$ 0.0944
6000$ 0.0918

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
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We are delighted to provide the RUR020N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUR020N02TL and other electronic components in the MOSFETs category and beyond.

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RUR020N02 Nch 20V 2A Power MOSFET Datasheet l Outline V TSMT3 20V DSS (3) R (Max.) 105mW DS(on) I 2A (1) D P 1W (2) D l l Features Inner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 Road SW Type Basic ordering unit (pcs) 3,000 Taping code TL Marking XK lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS *1 Continuous drain current I 2 A D *2 Pulsed drain current A I 6 D,pulse V Gate - Source voltage 10 V GSS *3 P 1.0 W D Power dissipation *4 0.54 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet RUR020N02 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 125 C/W thJA *4 Thermal resistance, junction - ambient R - - 231 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 20 - mV/C temperature coefficient T referenced to 25C j I V = 20V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 10V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 0.3 - 1.0 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - -1.9 - mV/C temperature coefficient T referenced to 25C j V =4.5V, I =2A - 75 105 GS D V =2.5V, I =2A - 95 135 GS D Static drain - source *5 V =1.8V, I =1A R - 130 185 mW GS D DS(on) on - state resistance V =1.5V, I =0.4A - 170 240 GS D V =4.5V, I =2A, T =125C - 120 170 GS D j Gate input resistannce R f = 1MHz, open drain - 24 - W G *5 V = 10V, I = 2A Transconductance g 1.8 4.2 - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (12200.8mm) www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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