RUM002N02T2L ROHM

RUM002N02T2L electronic component of ROHM
RUM002N02T2L ROHM
RUM002N02T2L MOSFETs
RUM002N02T2L  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RUM002N02T2L MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUM002N02T2L MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RUM002N02T2L
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET SW MOSFET SMLL SIG N-CH 20V .2A
Datasheet: RUM002N02T2L Datasheet (PDF)
Price (USD)
20: USD 0.0682 ea
Line Total: USD 1.36 
Availability : 67589
  
Ship by Fri. 22 Aug to Wed. 27 Aug
QtyUnit Price
20$ 0.0682
200$ 0.0536
600$ 0.034
2000$ 0.0274
8000$ 0.021
16000$ 0.0195

Availability 152621
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3375
10$ 0.2087
100$ 0.0888
500$ 0.0781
1000$ 0.0704
2500$ 0.0682
5000$ 0.0473
8000$ 0.0451


Availability 67589
Ship by Fri. 22 Aug to Wed. 27 Aug
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0682
200$ 0.0536
600$ 0.034
2000$ 0.0274
8000$ 0.021
16000$ 0.0195


Availability 46560
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 2365
Multiples : 1
QtyUnit Price
2365$ 0.11
2445$ 0.1063
2519$ 0.1032
5000$ 0.0966
10000$ 0.0942
25000$ 0.0921


Availability 5224
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.406
10$ 0.2786
50$ 0.1596
100$ 0.1232
308$ 0.0616


Availability 7760
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 2365
Multiples : 1
QtyUnit Price
2365$ 0.11
2445$ 0.1063
2519$ 0.1032
5000$ 0.0966


Availability 46269
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 893
Multiples : 1
QtyUnit Price
893$ 0.4077


Availability 9460
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 2365
Multiples : 1
QtyUnit Price
2365$ 0.11
2445$ 0.1063
2519$ 0.1032
5000$ 0.0966

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RUM002N02T2L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUM002N02T2L and other electronic components in the MOSFETs category and beyond.

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RUM002N02T2L is a dual N-channel logic level power MOSFET from Rohm Semiconductor. It has a drain-source voltage (VDSS) of 30V and a drain-source on-state resistance (RDS(on)) of 2.0 ohms at 10V. It also has an on-board protection diode and a low gate charge for efficient switching. The RUM002N02T2L is suitable for use in a variety of switching applications, including DC/DC converters, switched-mode power supplies, and power management systems for consumer electronics, industrial, automotive, and telecom applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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