RUR040N02TL ROHM

Hot RUR040N02TL electronic component of ROHM
RUR040N02TL ROHM
RUR040N02TL MOSFETs
RUR040N02TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RUR040N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUR040N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RUR040N02TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 4A
Datasheet: RUR040N02TL Datasheet (PDF)
Price (USD)
1: USD 1.0038 ea
Line Total: USD 1 
Availability : 4559
  
Ship by Wed. 13 Aug to Fri. 15 Aug
QtyUnit Price
1$ 1.0038
10$ 0.6612
100$ 0.3993
500$ 0.3267
1000$ 0.3003
3000$ 0.2673
6000$ 0.2475
9000$ 0.2376

Availability 4559
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0038
10$ 0.6612
100$ 0.3993
500$ 0.3267
1000$ 0.3003
3000$ 0.2673
6000$ 0.2475
9000$ 0.2376


Availability 3458
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 333
Multiples : 1
QtyUnit Price
333$ 0.7822


Availability 40935
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 220
Multiples : 1
QtyUnit Price
220$ 1.1843
333$ 0.7813
500$ 0.5226
1000$ 0.5012
3000$ 0.3937
6000$ 0.3475
12000$ 0.3
24000$ 0.2713


Availability 2910
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.204
10$ 0.812
66$ 0.2898
180$ 0.2744

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RUR040N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUR040N02TL and other electronic components in the MOSFETs category and beyond.

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RUR040N02 Datasheet Nch 20V 4A Small Signal MOSFET llOutline SOT-346T V 20V DSS SC-96 R (Max.) 35m DS(on) TSMT3 I 4.0A D P 1.0W D llInner circuit llFeatures 1) 1.5V drive 2) Low on-resistance 3) Built-in G-S protection diode 4) Small surface mount package(TSMT3) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 4.0 A D *1 I Pulsed drain current 8.0 A DP V Gate - Source voltage 10 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180702 - Rev.002 RUR040N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.3 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 4.0A - 25 35 GS D V = 2.5V, I = 4.0A - 33 46 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 2.0A - 42 59 GS D V = 1.5V, I = 0.8A - 55 110 GS D R Gate resistance f = 1MHz, open drain - 6.9 - G Forward Transfer *4 Y V = 10V, I = 4.0A 5.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20180702 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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