X-On Electronics has gained recognition as a prominent supplier of RUR040N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUR040N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUR040N02TL ROHM

Hot RUR040N02TL electronic component of ROHM
RUR040N02TL ROHM
RUR040N02TL MOSFETs
RUR040N02TL  Semiconductors

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See Product Specifications
Part No. RUR040N02TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 4A
Datasheet: RUR040N02TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9825 ea
Line Total: USD 0.98 
Availability - 4559
Ship by Fri. 27 Jun to Tue. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4559
Ship by Fri. 27 Jun to Tue. 01 Jul
MOQ : 1
Multiples : 1
1 : USD 0.9825
10 : USD 0.6488
100 : USD 0.3916
500 : USD 0.3223
1000 : USD 0.2948
3000 : USD 0.2618
6000 : USD 0.2475

3593
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 524
Multiples : 1
524 : USD 0.4968
546 : USD 0.4768
566 : USD 0.4595
1000 : USD 0.4275
2500 : USD 0.4149

40984
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 253
Multiples : 1
253 : USD 1.0283
408 : USD 0.6383
511 : USD 0.5096
1000 : USD 0.4875
3000 : USD 0.39
6000 : USD 0.3687
12000 : USD 0.2625
24000 : USD 0.2487

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RUR040N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUR040N02TL and other electronic components in the MOSFETs category and beyond.

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RUR040N02 Datasheet Nch 20V 4A Small Signal MOSFET llOutline SOT-346T V 20V DSS SC-96 R (Max.) 35m DS(on) TSMT3 I 4.0A D P 1.0W D llInner circuit llFeatures 1) 1.5V drive 2) Low on-resistance 3) Built-in G-S protection diode 4) Small surface mount package(TSMT3) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 4.0 A D *1 I Pulsed drain current 8.0 A DP V Gate - Source voltage 10 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180702 - Rev.002 RUR040N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.3 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 4.0A - 25 35 GS D V = 2.5V, I = 4.0A - 33 46 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 2.0A - 42 59 GS D V = 1.5V, I = 0.8A - 55 110 GS D R Gate resistance f = 1MHz, open drain - 6.9 - G Forward Transfer *4 Y V = 10V, I = 4.0A 5.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20180702 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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