X-On Electronics has gained recognition as a prominent supplier of RV1C001ZPT2L MOSFETs across the USA, India, Europe, Australia, and various other global locations. RV1C001ZPT2L MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RV1C001ZPT2L ROHM

RV1C001ZPT2L electronic component of ROHM
RV1C001ZPT2L ROHM
RV1C001ZPT2L MOSFETs
RV1C001ZPT2L  Semiconductors

Images are for reference only
See Product Specifications
Part No. RV1C001ZPT2L
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Small Signal MOSFET
Datasheet: RV1C001ZPT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3175 ea
Line Total: USD 0.32 
Availability - 11449
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
63
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ : 5
Multiples : 5
5 : USD 0.4374
50 : USD 0.3396
150 : USD 0.2007
500 : USD 0.1655
2500 : USD 0.1497
5000 : USD 0.1404

11449
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 0.3175
10 : USD 0.1913
100 : USD 0.1068
500 : USD 0.0748
1000 : USD 0.0627
2500 : USD 0.0616
5000 : USD 0.0572
8000 : USD 0.0451
24000 : USD 0.0418

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RV1C001ZPT2L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RV1C001ZPT2L and other electronic components in the MOSFETs category and beyond.

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RV1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET llOutline DFN0806-3 V -20V DSS R (Max.) 3.8 DS(on) VML0806 I 100mA D P 100mW D llFeatures llInner circuit 1) Low on - resistance. 2) High Power small mold Package (VML0806). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2L Marking RX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 100 mA D *1 Pulsed drain current I 400 mA DP V Gate - Source voltage 10 V GSS *2 Power dissipation P 100 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160920 - Rev.001 RV1C001ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 1250 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -10V, I = -100A -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -100mA - 2.5 3.8 GS D V = -2.5V, I = -50mA - 3.4 5.1 GS D Static drain - source *3 R V = -1.8V, I = -20mA - 4.8 8.2 DS(on) GS D on - state resistance V = -1.5V, I = -10mA - 6.0 13.2 GS D V = -1.2V, I = -1mA - 10.0 40.0 GS D Forward Transfer *3 Y V = -10V, I = -100mA 120 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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