RV1C001ZPT2L ROHM

RV1C001ZPT2L electronic component of ROHM
RV1C001ZPT2L ROHM
RV1C001ZPT2L MOSFETs
RV1C001ZPT2L  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RV1C001ZPT2L MOSFETs across the USA, India, Europe, Australia, and various other global locations. RV1C001ZPT2L MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RV1C001ZPT2L
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Small Signal MOSFET
Datasheet: RV1C001ZPT2L Datasheet (PDF)
Price (USD)
1: USD 0.3175 ea
Line Total: USD 0.32 
Availability : 6008
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 0.3175
10$ 0.1912
100$ 0.1128
500$ 0.077
1000$ 0.0594
5000$ 0.0539

Availability 6008
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3175
10$ 0.1912
100$ 0.1128
500$ 0.077
1000$ 0.0594
5000$ 0.0539


Availability 3209
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1439
Multiples : 1
QtyUnit Price
1439$ 0.1807
1487$ 0.1748
2500$ 0.1631


Availability 14388
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1112
Multiples : 1
QtyUnit Price
1112$ 0.234
2223$ 0.117
2228$ 0.1167
5000$ 0.1044
8000$ 0.0985

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the RV1C001ZPT2L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RV1C001ZPT2L and other electronic components in the MOSFETs category and beyond.

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RV1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET llOutline DFN0806-3 V -20V DSS R (Max.) 3.8 DS(on) VML0806 I 100mA D P 100mW D llFeatures llInner circuit 1) Low on - resistance. 2) High Power small mold Package (VML0806). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2L Marking RX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 100 mA D *1 Pulsed drain current I 400 mA DP V Gate - Source voltage 10 V GSS *2 Power dissipation P 100 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160920 - Rev.001 RV1C001ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 1250 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -10V, I = -100A -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -100mA - 2.5 3.8 GS D V = -2.5V, I = -50mA - 3.4 5.1 GS D Static drain - source *3 R V = -1.8V, I = -20mA - 4.8 8.2 DS(on) GS D on - state resistance V = -1.5V, I = -10mA - 6.0 13.2 GS D V = -1.2V, I = -1mA - 10.0 40.0 GS D Forward Transfer *3 Y V = -10V, I = -100mA 120 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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