X-On Electronics has gained recognition as a prominent supplier of RV2C010UNT2L MOSFETs across the USA, India, Europe, Australia, and various other global locations. RV2C010UNT2L MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RV2C010UNT2L ROHM

RV2C010UNT2L electronic component of ROHM
RV2C010UNT2L ROHM
RV2C010UNT2L MOSFETs
RV2C010UNT2L  Semiconductors

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See Product Specifications
Part No. RV2C010UNT2L
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RV2C010UNT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4325 ea
Line Total: USD 0.43 
Availability - 11143
Ship by Mon. 23 Jun to Wed. 25 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7667
Ship by Wed. 02 Jul to Mon. 07 Jul
MOQ : 5
Multiples : 5
5 : USD 0.2442
50 : USD 0.1938
150 : USD 0.1263
500 : USD 0.1009
2500 : USD 0.0811
5000 : USD 0.076

11143
Ship by Mon. 23 Jun to Wed. 25 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4325
10 : USD 0.2737
100 : USD 0.1704
500 : USD 0.1188
1000 : USD 0.0979
8000 : USD 0.0715
24000 : USD 0.0682

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RV2C010UNT2L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RV2C010UNT2L and other electronic components in the MOSFETs category and beyond.

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RV2C010UN Datasheet Nch 20V 1A Power MOSFET llOutline DFN1006-3 V 20V DSS SC-101 R (Max.) 470m DS(on) VML1006 I 1.0A D P 400mW D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (VML1006). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. 5) ESD protection up to 200V (MM). up to 2kV (HBM). llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2L Marking TJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 1.0 A D *1 I Pulsed drain current 2.0 A DP V Gate - Source voltage 8 V GSS *2 P Power dissipation 400 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160905 - Rev.004 RV2C010UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 312.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 500mA - 340 470 GS D V = 2.5V, I = 500mA - 400 560 GS D Static drain - source *3 R V = 1.8V, I = 250mA - 470 650 m DS(on) GS D on - state resistance V = 1.5V, I = 100mA - 540 810 GS D V = 1.2V, I = 50mA - 700 1050 GS D Forward Transfer *3 Y V = 10V, I = 100mA 400 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 EACH TERMINAL MOUNTED ON A REFFERENCE LANDPw1s *3 Pulsed www.rohm.com 2/11 20160905 - Rev.004 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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