SGT20N60FD1PN Silan

SGT20N60FD1PN electronic component of Silan
SGT20N60FD1PN Silan
SGT20N60FD1PN IGBT Transistors
SGT20N60FD1PN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SGT20N60FD1PN IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SGT20N60FD1PN IGBT Transistors are a product manufactured by Silan. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. SGT20N60FD1PN
Manufacturer: Silan
Category: IGBT Transistors
Description: IGBTs TO-3P RoHS
Datasheet:
Price (USD)
1: USD 1.9183 ea
Line Total: USD 1.92 
Availability : 0
  
QtyUnit Price
1$ 1.9183
10$ 1.5849
30$ 1.3415
100$ 1.1418
500$ 1.1077
1000$ 1.0907
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Igbt Type
Voltage - Collector Emitter Breakdown Max
Current - Collector Ic Max
Gate Threshold Voltage-Vgeth
Vceon Max @ Vge Ic
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SGT20N60FD1PN from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SGT20N60FD1PN and other electronic components in the IGBT Transistors category and beyond.

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The SGT20N60FD1PN is a RoHS-compliant IGBT (Insulated Gate Bipolar Transistor) in a TO-3P (Transistor Outline) package manufactured by Silan. This IGBT is specifically designed to provide enhanced protection against accidental damage from electrostatic discharge. It has a low on-state voltage, a low power dissipation, and a high current rated capability. It also features a very low input capacitance and a fast turn-off time, allowing it to operate in high frequency switching applications. Additionally, this IGBT is suitable for use in AC/DC motor drives, solenoid control, and lighting ballast applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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