2SC5200 STMicroelectronics

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage V = 230 V CEO Typical f = 30 MHz T Application Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2SC5200 2SC5200 TO-264 Tube September 2009 Doc ID 16310 Rev 1 1/8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8 change without notice. Obsolete Product(s) - Obsolete Product(s)Electrical ratings 2SC5200 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 230 V CBO E V Collector-emitter voltage (I = 0) 230 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 15 A C I Collector peak current 30 A CM P Total dissipation at T = 25 C 150 W TOT C T Storage temperature -55 to 150 C STG T Operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 0.83 C/W thJC 2/8 Doc ID 16310 Rev 1 Obsolete Product(s) - Obsolete Product(s)