BUTW92 STMicroelectronics

BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL HIGH FREQUENCY AND EFFICIENCY CONVERTERS 3 2 DESCRIPTION 1 High current, high speed transistor suited for power conversion applications, high efficency TO-247 converters and motor controls. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 500 V CES BE V Collector-Emitter Voltage (I = 0) 250 V CEO B V Emitter-Base Voltage (I = 0) 7 V EBO C IE Emitter-Current 60 A I Emitter Peak Current (t < 5ms) 70 A EM p I Base Current 15 A B I Base Peak Current (t < 5ms) 18 A BM p o P 180 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/4 September 2001 BUTW92 THERMAL DATA o R Thermal Resistance Junction-case MAX 0.7 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 450 V 50 A CES CE o Current (V = -1.5V) V = 450 V T = 100 C 1 mA BE CE C I Emitter Cut-off Current V = 5 V 50 A EBO EB (I = 0) C V Collector-Emitter I = 5 mA 500 V CES C Voltage (V =0) EB VEBO Emitter-Base Voltage IE = 50 mA 7 V (I = 0) C V * Collector-Emitter I = 200 mA 250 V CEO(sus) C Sustaining Voltage (I =0) B V * Collector-Emitter I = 60 A I = 15 A 0.8 1 V CE(sat) C B o Saturation Voltage I = 60 A I = 15 A T = 100 C 1.1 1.5 V C B C V * Base-Emitter I = 60 A I = 15 A 1.9 V BE(sat) C B o Saturation Voltage I = 60 A I = 15 A T = 100 C 2 V C B C h * DC Current Gain I = 60 A V = 3 V 9 FE C CE o I = 60 A V = 3 V T = 100 C 6 C CE C I = 5 A V = 3 V 65 C CE RESISTIVE LOAD t Storage Time I = 50 A V = 250 V 1.2 1.4 s s C CC t Fall Time I = -I = 10 A 250 300 ns f B1 B2 * Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % 2/4