FERD30H100STS STMicroelectronics

FERD30H100S 100 V field-effect rectifier diode Datasheet - production data A Description K The device is based on a proprietary technology K A that achieves the best in class V /I trade-off for a F R K given silicon surface. This 100 V rectifier has A been optimized for use in confined casing K A IPAK applications where both efficiency and thermal A K performance matter. With a lower dependency of A TO-220AB leakage current (IR) and forward voltage (VF) in K K function of temperature, the thermal runaway risk A A is reduced. Therefore, it can advantageously A A replace 100 V Schottky diodes. DPAK Table 1: Device summary Symbol Value IF(AV) 30 A Features V 100 V RRM ST advanced rectifier process VF (max.) 0.405 V Stable leakage current over reverse voltage Reduced leakage current I (max.) 130 A R Low forward voltage drop Tj(max.) 175 C High frequency operation ECOPACK 2 compliant component November 2017 DocID029159 Rev 2 1/13 www.st.com This is information on a product in full production. Characteristics FERD30H100S 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified, with anode terminals short circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V I Forward rms current 45 A F(RMS) Average forward current = 0.5, I T = 145 C 30 A F(AV) C square wave t = 10 ms sinusoidal, p 150 DPAK/IPAK I Surge non repetitive forward current A FSM tp = 10 ms sinusoidal, 250 TO-220AB Tstg Storage temperature range -65 to +175 C (1) T Maximum operating junction temperature +175 C j Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal resistance parameters Symbol Parameter Value Unit Junction to case Rth(j-c) 0.9 C/W Table 4: Static electrical characteristics with anode terminals short circuited Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 130 A j V = V R RRM (1) IR Reverse leakage current Tj = 125 C - 8 16 mA T = 125 C V = 70 V - 4 7 j R Tj = 25 C - 0.390 0.440 IF = 3 A T = 125 C - 0.350 0.405 j Tj = 25 C - 0.440 0.495 IF = 5 A (2) V Forward voltage drop T = 125 C - 0.415 0.470 V F j Tj = 25 C - 0.550 0.620 IF = 10 A T = 125 C - 0.530 0.585 j Tj = 125 C IF = 30 A - 0.680 0.745 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.424 x IF(AV) + 0.0133 IF (RMS) 2/13 DocID029159 Rev 2