Product Information

M93C86-RMN3TP/K

M93C86-RMN3TP/K electronic component of STMicroelectronics

Datasheet
EEPROM Auto 16-Kb MICROWIRE serial EEPROM
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.651 ea
Line Total: USD 0.65

29 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
29 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

M93C86-RMN3TP/K
STMicroelectronics

1 : USD 0.651
10 : USD 0.5664
30 : USD 0.5131
100 : USD 0.4383
500 : USD 0.4142
1000 : USD 0.4031

29100 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

Stock Image

M93C86-RMN3TP/K
STMicroelectronics

2500 : USD 0.5902

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
Series
Qualification
Packaging
Brand
Operating Supply Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Tradename
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Additional Infomation About Product

M93Cx6-A125 Automotive 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE serial EEPROM Datasheet - production data Features Industry standard MICROWIRE bus Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb Dual organization: by word (x16) or byte (x8) Write SO8 (MN) Byte within 4 ms 150 mil width Word within 4 ms READY/BUSY signal during programming 2 MHz clock rate Sequential read operation Single supply voltage: 1.8 V to 5.5 V TSSOP8 (DW) Operating temperature range: -40 C up to 169 mil width 125 C Enhanced ESD protection Write cycle endurance 4 million Write cycles at 25 C 1.2 million Write cycles at 85 C WFDFPN8 (MF) 600 k Write cycles at 125 C 2 x 3 mm Data retention 50 years at 125 C more than 100 years at 25 C Packages RoHS-compliant and Halogen-free (ECOPACK2 ) Table 1. Device summary Reference Part number M93C46-A125 M93C56-A125 M93Cx6-A125 M93C66-A125 M93C76-A125 M93C86-A125 January 2015 DocID024752 Rev 5 1/31 This is information on a product in full production. www.st.comContents M93Cx6-A125 Contents 1 Description . 6 2 Connecting to the serial bus 8 3 Operating features 9 3.1 Supply voltage (V ) . 9 CC 3.1.1 Operating supply voltage (V ) 9 CC 3.1.2 Power-up conditions 9 3.1.3 Power-up and device reset . 9 3.1.4 Power-down . 9 4 Memory organization . 10 5 Instructions . 11 5.1 Read Data from Memory . 13 5.2 Erase and Write data 13 5.2.1 Write Enable and Write Disable . 13 5.2.2 Write . 13 5.2.3 Write All . 15 5.2.4 ECC (Error Correction Code) and Write cycling 15 5.2.5 Erase Byte or Word 16 5.2.6 Erase All 16 6READY/BUSY status 17 7 Initial delivery state . 17 8 Common I/O operation 17 9 Clock pulse counter 18 10 Maximum ratings . 19 11 DC and AC parameters 20 2/31 DocID024752 Rev 5

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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