PD57002-E

PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 2 W with 15dB gain 960 MHz / 28 V OUT New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power PowerSO-10RF (formed lead) transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer Figure 1. Pin connection high reliability, is the first ST JEDEC approved, Source high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Drain Gate Table 1. Device summary Order code Package Packing PD57002-E PowerSO-10RF (formed lead) Tube May 2012 Doc ID 12332 Rev 4 1/19 This is information on a product in full production. www.st.com 19Contents PD57002-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Common source s-parameter 10 6 Package mechanical data 14 7 Revision history . 18 2/19 Doc ID 12332 Rev 4