Product Information

SCTW90N65G2V

SCTW90N65G2V electronic component of STMicroelectronics

Datasheet
N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 31.5694 ea
Line Total: USD 31.57

582 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
582 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

SCTW90N65G2V
STMicroelectronics

1 : USD 40.456
10 : USD 35.711
25 : USD 35.399
50 : USD 35.386
100 : USD 33.852
250 : USD 31.655

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

SCTW90N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 119 A, 18 m (typ., T = 25 C) J in an HiP247 package Features V R max. I Order code DS DS(on) D SCTW90N65G2V 650 V 24 m 119 A Very high operating junction temperature capability (T = 200 C) J Very fast and robust intrinsic body diode 3 Extremely low gate charge and input capacitances 2 1 HiP247 Applications Switching applications Power supply for renewable energy systems D(2, TAB) High frequency DC-DC converters Description G(1) This silicon carbide Power MOSFET device has been developed using STs nd advanced and innovative 2 generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction S(3) temperature. AM01475v1 noZen Product status link SCTW90N65G2V Product summary Order code SCTW90N65G2V Marking SCT90N65G2V Package HiP247 Packing Tube DS11832 - Rev 5 - July 2019 www.st.com For further information contact your local STMicroelectronics sales office.SCTW90N65G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operating values) -5 to 18 Drain current (continuous) at T = 25 C 119 C I A D Drain current (continuous) at T = 100 C 90 C (1) I Drain current (pulsed) 220 A DM P Total power dissipation at T = 25 C 565 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.31 C/W thj-case R Thermal resistance junction-ambient 40 C/W thj-amb DS11832 - Rev 5 page 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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