SCTW90N65G2V STMicroelectronics

SCTW90N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 119 A, 18 m (typ., T = 25 C) J in an HiP247 package Features V R max. I Order code DS DS(on) D SCTW90N65G2V 650 V 24 m 119 A Very high operating junction temperature capability (T = 200 C) J Very fast and robust intrinsic body diode 3 Extremely low gate charge and input capacitances 2 1 HiP247 Applications Switching applications Power supply for renewable energy systems D(2, TAB) High frequency DC-DC converters Description G(1) This silicon carbide Power MOSFET device has been developed using STs nd advanced and innovative 2 generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction S(3) temperature. AM01475v1 noZen Product status link SCTW90N65G2V Product summary Order code SCTW90N65G2V Marking SCT90N65G2V Package HiP247 Packing Tube DS11832 - Rev 5 - July 2019 www.st.com For further information contact your local STMicroelectronics sales office.SCTW90N65G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operating values) -5 to 18 Drain current (continuous) at T = 25 C 119 C I A D Drain current (continuous) at T = 100 C 90 C (1) I Drain current (pulsed) 220 A DM P Total power dissipation at T = 25 C 565 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.31 C/W thj-case R Thermal resistance junction-ambient 40 C/W thj-amb DS11832 - Rev 5 page 2/12