ST13007D STMicroelectronics

ST13007D electronic component of STMicroelectronics
ST13007D STMicroelectronics
ST13007D Bipolar Transistors - BJT
ST13007D  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ST13007D Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ST13007D Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ST13007D
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 400 V 8 A 80 W Through Hole TO-220
Datasheet: ST13007D Datasheet (PDF)
Price (USD)
1: USD 1.9142 ea
Line Total: USD 1.91 
Availability : 77
  
Ship by Fri. 22 Aug to Wed. 27 Aug
QtyUnit Price
1$ 1.9142
10$ 1.5914
50$ 0.9533
100$ 0.8174
500$ 0.7578
1000$ 0.7299

Availability 187
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.646
3$ 2.338
10$ 1.862
14$ 1.4
38$ 1.33


Availability 77
Ship by Fri. 22 Aug to Wed. 27 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.9142
10$ 1.5914
50$ 0.9533
100$ 0.8174
500$ 0.7578
1000$ 0.7299


Availability 921
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 950
Multiples : 950
QtyUnit Price
950$ 0.878

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ST13007D from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ST13007D and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED o FULLY CHARACTERIZED AT 125 C TO-220 LARGE RBSOA APPLICATIONS UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS SWITCH MODE POWER SUPPLIES INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = -1.5V) 700 V CEV BE V Collector-Emitter Voltage (I = 0) 400 V CEO B V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 8 A C I Collector Peak Current 16 A CM I Base Current 4 A B I Base Peak Current 8 A BM o P Total Dissipation at T 25 C 80 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/7 April 2003 ST13007D THERMAL DATA o R Thermal Resistance Junction-case Max 1.56 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 700 V 10 A CES CE o Current (V = 0) V = 700 V T = 100 C 0.5 mA BE CE c I Collector Cut-off V = 400 V 100 A CEO CE Current (I = 0) B I Emitter Cut-off Current V = 9 V 100 A EBO EB (I = 0) C V * Collector-Emitter I = 10 mA 400 V CEO(sus) C Sustaining Voltage (I = 0) B V * Collector-Emitter I = 2 A I = 0.4 A 0.8 V CE(sat) C B Saturation Voltage I = 5 A I = 1 A 1.5 V C B I = 8 A I = 2 A 2 V C B o I = 5 A I = 1 A T = 100 C 3 V C B c V * Base-Emitter I = 2 A I = 0.4 A 1.2 V BE(sat) C B Saturation Voltage I = 5 A I = 1 A 1.6 V C B o I = 5 A I = 1 A T = 100 C 1.5 V C B c h * DC Current Gain I = 2 A V = 5 V 18 40 FE C CE I = 5 A V = 5 V 8 25 C CE V Diode Forward I = 3 A 2.5 V f C Voltage INDUCTIVE LOAD I = 5 A V = 250 V R = 0 C CL BB t Storage Time I = 1 A V = -5 V 1.7 2.3 s s B1 BE(off) t Fall Time 90 150 ns f L = 200 H (see figure 1) INDUCTIVE LOAD I = 5 A V = 250 V R = 0 C CL BB ts Storage Time 2.2 s = 1 A V = -5 V B1 BE(off) o t Fall Time 150 ns f L = 200 H T = 125 C C (see figure 1) * Pulsed: Pulse duration = 300 s, duty cycle 2 %. 2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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