STB15N65M5, STD15N65M5 Datasheet N-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs 2 in D PAK and DPAK packages Features TAB TAB V DS Order code R max. I DS(on) D 3 T Jmax 2 2 1 3 STB15N65M5 1 2 710 V 0.34 11 A D PAK DPAK STD15N65M5 Extremely low R DS(on) D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested G(1) Applications S(3) AM01475v1 noZen Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status STB15N65M5 STD15N65M5 DS9045 - Rev 2 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB15N65M5, STD15N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 11 A D C I Drain current (continuous) at T = 100 C 6.9 A D C (1) I Drain current (pulsed) 44 A DM P Total dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 11 A, di/dt 400 A/s, V = 400 V, V < V . SD DD DS(peak) (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 DPAK D PAK R Thermal resistance junction-case 1.47 C/W thj-case (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 2.5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 160 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS9045 - Rev 2 page 2/24