X-On Electronics has gained recognition as a prominent supplier of STB15N65M5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB15N65M5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB15N65M5 STMicroelectronics

STB15N65M5 electronic component of STMicroelectronics
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Part No.STB15N65M5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 650V 0.308 Ohm 11A Mdmesh V
Datasheet: STB15N65M5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 1.5535 ea
Line Total: USD 7.77 
Availability - 21
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
21
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5535

21
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 5
Multiples : 1
5 : USD 1.5535

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Technology
Number of Channels
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
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Configuration
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the STB15N65M5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB15N65M5 and other electronic components in the MOSFETs category and beyond.

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STB15N65M5, STD15N65M5 Datasheet N-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs 2 in D PAK and DPAK packages Features TAB TAB V DS Order code R max. I DS(on) D 3 T Jmax 2 2 1 3 STB15N65M5 1 2 710 V 0.34 11 A D PAK DPAK STD15N65M5 Extremely low R DS(on) D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested G(1) Applications S(3) AM01475v1 noZen Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status STB15N65M5 STD15N65M5 DS9045 - Rev 2 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB15N65M5, STD15N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 11 A D C I Drain current (continuous) at T = 100 C 6.9 A D C (1) I Drain current (pulsed) 44 A DM P Total dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 11 A, di/dt 400 A/s, V = 400 V, V < V . SD DD DS(peak) (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 DPAK D PAK R Thermal resistance junction-case 1.47 C/W thj-case (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 2.5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 160 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS9045 - Rev 2 page 2/24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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