STD16N65M5 Datasheet N-channel 650 V, 0.230 typ., 12 A MDmesh M5 Power MOSFET in a DPAK package Features V at T R max. I Order codes TAB DS jmax. DS(on) D STD16N65M5 710 V 0.279 12 A 3 2 1 Extremely low R DS(on) DPAK Low gate charge and input capacitance Excellent switching performance D(2, TAB) 100% avalanche tested Applications Switching applications G(1) Description S(3) This device is an N-channel Power MOSFET based on the MDmesh M5 innovative AM01475v1 noZen vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status link STD16N65M5 Product summary Order code STD16N65M5 Marking 16N65M5 Package DPAK Packing Tape and reel DS7011 - Rev 3 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD16N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 12 A D C I Drain current (continuous) at T = 100 C 7.3 A D C (1) I Drain current (pulsed) 48 A DM P Total power dissipation at T = 25 C 90 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 12 A, di/dt 400 A/s, V = 400 V, V < V . SD DD DS(peak) (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.38 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 4 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 200 mJ AS j D AR DD DS7011 - Rev 3 page 2/19